Abstract: Methods of forming edge etch protection using dual layers of positive-negative tone resists. According to a method, a wafer substrate is provided. A first type resist is deposited on a surface of the wafer substrate. The first type resist is patterned and a resist ring is created around a peripheral edge of the wafer substrate. The resist ring is cured. A second type resist is deposited on the surface of the wafer substrate and the resist ring. The second type resist is different from the first type resist.

Abstract: Methods of forming edge etch protection using dual layers of positive-negative tone resists. According to a method, a wafer substrate is provided. A first type resist is deposited on a surface of the wafer substrate. The first type resist is patterned and a resist ring is created around a peripheral edge of the wafer substrate. The resist ring is cured. A second type resist is deposited on the surface of the wafer substrate and the resist ring. The second type resist is different from the first type resist.

Abstract: The present invention provides for a four dimensional (4D) information distribution system and method which allows on-demand and real-time transmission of time-sensitive and useful self-help data or instructional materials to user. The transmission of the 4D information can be initiated at the user's request or it can be automatically carried out based on a set of established rules, such as a schedule of events. The 4D information distribution system includes a processing device for generating the 4D information, a distribution device for transmission of the 4D information, a receiving device for accepting the 4D information, and a display device for outputting the received 4D information.

Abstract: The present invention provides for a four dimensional (4D) information distribution system and method which allows on-demand and real-time transmission of time-sensitive and useful self-help data or instructional materials to user. The transmission of the 4D information can be initiated at the user's request or it can be automatically carried out based on a set of established rules, such as a schedule of events. The 4D information distribution system includes a processing device for generating the 4D information, a distribution device for transmission of the 4D information, a receiving device for accepting the 4D information, and a display device for outputting the received 4D information.

Abstract: The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure.

Abstract: The present invention provides for a mobile device component used in a 4DHelp information distribution system. The mobile device enables a user to utilize the 4DHelp information distribution system in a wireless environment such that even if the user is physically isolated from self-help data or instructional materials, the user can still access useful 4DHelp information and receive significant benefits. The mobile device includes an input device for which the user can enter a user request, a transmitting device that transmits and retrieves 4DHelp data based upon the user's request, a receiver that accepts the 4DHelp data transmitted, and a processing device that provides a visual output display to the user and allows the user to adjust the 4DHelp visual output display.

Abstract: The present invention provides for a four dimensional (4D) information distribution system and method which allows on-demand and real-time transmission of time-sensitive and useful self-help data or instructional materials to user. The transmission of the 4D information can be initiated at the user's request or it can be automatically carried out based on a set of established rules, such as a schedule of events. The 4D information distribution system includes a processing device for generating the 4D information, a distribution device for transmission of the 4D information, a receiving device for accepting the 4D information, and a display device for outputting the received 4D information.

Abstract: The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure.

Abstract: The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure.

Abstract: The present invention provides for a mobile device component used in a 4DHelp information distribution system. The mobile device enables a user to utilize the 4DHelp information distribution system in a wireless environment such that even if the user is physically isolated from self-help data or instructional materials, the user can still access useful 4DHelp information and receive significant benefits. The mobile device includes an input device for which the user can enter a user request, a transmitting device that transmits and retrieves 4DHelp data based upon the user's request, a receiver that accepts the 4DHelp data transmitted, and a processing device that provides a visual output display to the user and allows the user to adjust the 4DHelp visual output display.

Abstract: The present invention provides for a four dimensional (4D) information distribution system and method which allows on-demand and real-time transmission of time-sensitive and useful self-help data or instructional materials to user. The transmission of the 4D information can be initiated at the user's request or it can be automatically carried out based on a set of established rules, such as a schedule of events. The 4D information distribution system includes a processing device for generating the 4D information, a distribution device for transmission of the 4D information, a receiving device for accepting the 4D information, and a display device for outputting the received 4D information.

Abstract: The present invention provides for a method of transmitting directed advertisement to an end user in a 4DHelp information distribution system. The method employs intelligent information filtering and association such that when the user initiates a request for one set of 4DHelp instructional information, an additional set of 4DHelp promotional information that is related to the information requested is also transmitted along with the 4DHelp instructional information. To provide additional levels of customization, the 4DHelp information can be selected based on the location of the user as well as user's previously registered personal information.

Abstract: The present invention provides for a four dimensional (4D) Help information distribution system and method which allows on-demand, interactive, and real-time transmission of time-sensitive and useful self-help data or instructional materials to a user accessed based on a universal identification code. The transmission of the 4D information can be initiated at the user's request or it can be automatically carried out based on a set of established rules, such as a schedule of events and is referenced by the universal identification code. The 4D information distribution system includes a processing device for generating the 4D information, a distribution device for transmission of the 4D information, a receiving device for accepting the 4D information, and a display device for outputting the received 4D information.

Abstract: The present invention provides for a data structure for the four dimensional information data in a 4D Help information distribution system. The data structure is configured to allow for flexible organization of useful information customized to the user's needs. Specifically, the data structure includes three dimensional data, which captures substantive information about the user or a product involved; meta data which describes and identifies the contents of the three dimensional data; and instructional data which can be implemented as an interactive program that allows for dynamic user interaction with the three dimensional data.

Abstract: The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure.

Abstract: A method for forming an oxide layer on a silicon substrate includes forming a sacrificial oxide layer on the silicon substrate, implanting nitrogen into the silicon substrate, annealing the silicon substrate having implanted nitrogen, removing the sacrificial oxide layer from the silicon substrate, and forming an oxide layer on the silicon substrate. The dose of nitrogen implanted into silicon is preferably higher than 1e14 cm31 2. The annealing process is preferably performed at temperatures in a range from about 550° C. to about 1000° C. and for a time period between about 1 second and about 2 hours.

Abstract: Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat.

Abstract: Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectivly doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat.

Abstract: Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat.

Abstract: A method of image transfer transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The reist is imagewise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.