Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal form elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Novel polymer compositions which provide controlled end-group functionalization for polythiophenes including regioregular polythiophenes including alkenyl and alkynyl functionalization. Monocapped polymers are formed and can be converted to block copolymers. Conditions and reagents can be selected to provide more monocapping than dicapping of the polymer. Devices, films, and blends can be prepared.

Abstract: Metal complexes adapted to form metallic conductive films upon deposition and treatment. The complexes can have a high concentration of metal and can be soluble in polar protic solvent including ethanol and water. The metal complex can be a covalent complex and can comprise a first and second ligand. Low temperature treatment can be used to convert the complex to a metal. The metallic conductive film can have low resistivity and work function close to pure metal. Coinage metals can be used (e.g., Ag). The ligands can be dative bonding ligands including amines and carboxylate ligands. The ligands can be adapted to volatilize well. High yields of metal can be achieve with high conductivity.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal form elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Universal Grignard Metathesis (GRIM) reactions which provide access to conjugated polymers by GRIM methods. A method comprising: providing an unsaturated ring compound comprising at least two halogen ring substituents, providing an organomagnesium reagent comprising an organomagnesium component and a metal activation agent, combining the unsaturated ring compound with the reagent to form a second compound by metal-halogen exchange, wherein the metal activation agent activates the metal-halogen exchange, coupling the second compound to itself in an oligomerization or polymerization reaction. Metal activation agent can be lithium chloride. The process is commercially attractive and can be executed in good yields. Polyfluorenes, polypyrroles, and polythiophenes can be prepared for use in OLED, PLED, photovoltaic, transistor, antistatic coatings, and sensor applications.

Abstract: The present invention relates to polythiophenes, particularly regioregular head-to-tail poly(3-alkylthiophenes) (HT-PATs), block copolymers made therefrom, and their methods of formation. The present invention provides HT-PATs with well-defined, specific end-groups, functionalization of the defined HT-PATs, and incorporation of end group functionalized HT-PATs into block copolymers with structural polymers. The intrinsically conductive diblock and triblock copolymers, formed from the HT-PATs, have excellent conductivity and low polydispersities that are useful in a number of applications. The block copolymers of the present invention have been found to exhibit conductivities that range from a low of 10?8 S/cm for certain applications to as high as several hundred S/cm or more.

Abstract: Metal complexes adapted to form conductive metal films and lines upon deposition and treatment. The metal complex can be a covalent complex and can comprise a first and second ligand. Low temperature treatment can be used to convert the complex to a metal. The metal films and lines can have low resistivity and work function similar to pure metal. Coinage metals can be used (e.g., Ag, Au, Cu). The ligands can be dative bonding ligands including amines, unsymmetrical amines, and carboxylate ligands. Sulfur complexes can be used. Carboxylate ligands can be used. The complexes can have a high concentration of metal and can be soluble in aromatic hydrocarbon solvent. The ligands can be adapted to volatilize well. Inkjet printing can be carried out. High yields of metal can be achieve with high conductivity.

Abstract: Regioregular poly(3-alkylthiophenes) and other polythiophenes can be prepared by living polymerization which have good solubility, processability and environmental stability. The polymerization method can afford regioregular poly(3-alkylthiophenes) in high yields. Kinetic study of polymerization revealed the living character of this process. The molecular weight of poly(3-alkylthiophenes) is a function of the molar ratio of the monomer to nickel initiator, and conducting polymers with relatively narrow molecular weight distribution (PDI<1.5) are now readily available. Sequential monomer addition resulted in new block copolymers containing different poly(3-alkylthiophene) segments, which further confirms the “livingness” of this system. Other synthetic methods can be used as well to conduct living polymerization. Blends and electronic devices can be prepared.

Abstract: Novel polymer compositions which provide controlled end-group functionalization for polythiophenes including regioregular polythiophenes including alkenyl and alkynyl functionalization. Monocapped polymers are formed and can be converted to block copolymers. Conditions and reagents can be selected to provide more monocapping than dicapping of the polymer. Devices, films, and blends can be prepared.

Abstract: Metal complexing agents are used to purify polymers including conducting polymers to provide very low metal content. The process comprises precipitating the polymer in solution into a solvent system comprising the metal complexing agent. Very low levels including undetectable levels of metals such as nickel and magnesium can be achieved. High purity polymers are used in electronics and photovoltaic applications.

Abstract: Regioregular poly(3-alkylthiophenes) and other polythiophenes can be prepared by living polymerization which have good solubility, processability and environmental stability. The polymerization method can afford regioregular poly(3-alkylthiophenes) in high yields. Kinetic study of polymerization revealed the living character of this process. The molecular weight of poly(3-alkylthiophenes) is a function of the molar ratio of the monomer to nickel initiator, and conducting polymers with relatively narrow molecular weight distribution (PDI<1.5) are now readily available. Sequential monomer addition resulted in new block copolymers containing different poly(3-alkylthiophene) segments, which further confirms the “livingness” of this system. Other synthetic methods can be used as well to conduct living polymerization. Blends and electronic devices can be prepared.

Abstract: Electrically conductive polymers including block copolymers, polythiophene copolymers, and regioregular polythiophene copolymers, prepared by controlled radical polymerization including RAFT and NMP polymerization methods. Polymers having low metal content can be prepared. Method of synthesizing polythiophene polymers and copolymers using RAFT and NMP polymerization are also provided. Regioregular polythiophenes are preferred. Blends with polythiophenes and non-conducting polymers can be prepared. Applications include PLEDs, sensors, and optoelectronics.

Abstract: The present invention relates to polythiophenes, particularly regioregular head-to-tail poly(3-alkylthiophenes) (HT-PATs), block copolymers made therefrom, and their methods of formation. The present invention provides HT-PATs with well-defined, specific end-groups, functionalization of the defined HT-PATs, and incorporation of end group functionalized HT-PATs into block copolymers with structural polymers. The intrinsically conductive diblock and triblock copolymers, formed from the HT-PATs, have excellent conductivity and low polydispersities that are useful in a number of applications. The block copolymers of the present invention have been found to exhibit conductivities that range from a low of 10?8 S/cm for certain applications to as high as several hundred S/cm or more.

Abstract: The present invention relates to polythiophenes, particularly regioregular head-to-tail poly(3-alkylthiophenes) (HT-PATs), block copolymers made therefrom, and their methods of formation. The present invention provides HT-PATs with well-defined, specific end-groups, functionalization of the defined HT-PATs, and incorporation of end group functionalized HT-PATs into block copolymers with structural polymers. The intrinsically conductive diblock and triblock copolymers, formed from the HT-PATs, have excellent conductivity and low polydispersities that are useful in a number of applications. The block copolymers of the present invention have been found to exhibit conductivities that range from a low of 10?8 S/cm for certain applications to as high as several hundred S/cm or more.