Abstract: In one embodiment, a conductor bump is formed on an under bump conductor of a semiconductor device to extend a first distance away from a surface of the under bump conductor including forming a protective layer on an outer surface of the conductor bump wherein the plurality of semiconductor dies are subsequently singulated by etching through the semiconductor substrate with an etchant and wherein the protective layer protects the conductor bump from the etchant.

Abstract: In one embodiment, a conductor bump is formed on an under bump conductor of a semiconductor device to extend a first distance away from a surface of the under bump conductor including forming a protective layer on an outer surface of the conductor bump wherein the plurality of semiconductor dies are subsequently singulated by etching through the semiconductor substrate with an etchant and wherein the protective layer protects the conductor bump from the etchant.

Abstract: A boat hull having a bow and stern and requiring relatively small draft, having low frictional drag characteristics for high speed, stable performance, wherein the hull has a scooped configuration and defines a tri-keel design, wherein the side and bottom walls, making up the hull, define a first, open scoop portion and a second primary keel portion. The open scoop protion is of concave, curvilinear configuration and extends to a point rearwardly of the mid-point of the hull where it merges into the second or primary keel portion. The bottom and side walls of primary keel portion are V-shaped in configuration to thereby define the primary keel which extends from the merging surface to the stern. The first and second portions also cooperatively define about co-extensively therewith, extending from the open scoop portion, a pair of spaced apart secondary keels which extend from the approximate box of the hull to the stern thereof.