Abstract: The present invention is a wear sensing and monitoring system including: at least one sensor node, and wireless communication means, and a gateway node, and a remote monitoring and management node, wherein the wireless communication means are adapted to enable the at least one sensor node to have at least one-way wireless communication from the node to the gateway node. The gateway node is adapted to have at least one way wired or wireless communication from the gateway node to the remote monitoring and management node. Note that the two nodes may be included in the one device.

Abstract: The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

Abstract: The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.

Abstract: Monotomic dopant ions for ion implantation are supplied from vapour of a species containing plural atoms of the desired dopant. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the vapour species to produce monatomic dopant ions in the plasma for implantation.

Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

Abstract: This invention relates to a beam stop for an ion implanter that provides a measure of the ion beam current incident thereon and that may be used for ion beam optimisation. A beam stop for an ion implanter is provided comprising a charge collector with a segmented surface provided to receive an ion beam thereon, wherein the surface is divided into at least two segments, one segment extending around the other segment, and wherein each of the two segments is operable to provide one or more signals indicative of charge collected by that segment when an ion beam is incident thereon. Such a beam stop is advantageous as it provides information on the ion beam profile without the need to scan the ion beam.

Abstract: Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.

Abstract: Provided is an ion implanter having a deceleration lens assembly comprising a plurality of electrodes in which one or more of the apertures of the deceleration electrodes are shaped in a manner which can improve performance of the ion implanter. In one embodiment, an electrode aperture is generally elliptical in shape and conforms generally to the shape of the beam passing through the aperture. In another aspect, an axis segment extends 40% of the length of the aperture from the aperture center to an intermediate point at the end of the segment. The average width of the aperture measured at each point from the center to the intermediate point is substantially less than the maximum width of the aperture.

Abstract: Monotomic boron ions for ion implantation are supplied from decaborane vapor. The vapor is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.

Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

Abstract: G2 electrode is mounted so as to be movable along the beam line and, optionally, perpendicular to it as well. G1 and G2 are curved with a constant gap between G1 and G2 in the radial direction (so that the two electrodes are concentric). This contrasts with the prior art where G1 and G2 were equidistantly spaced along the beam line direction instead. G1 is made re-entrant adjacent the slit so as to improve extraction efficiency from the plasma. Finally, a lens such as a quadrupole lens is formed downstream of G3.

Abstract: Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.

Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

Abstract: G2 electrode is mounted so as to be movable along the beam line and, optionally, perpendicular to it as well. G1 and G2 are curved with a constant gap between G1 and G2 in the radial direction (so that the two electrodes are concentric). This contrasts with the prior art where G1 and G2 were equidistantly spaced along the beam line direction instead. G1 is made re-entrant adjacent the slit so as to improve extraction efficiency from the plasma. Finally, a lens such as a quadrupole lens is formed downstream of G3.