Patents by Inventor Richard Dodge
Richard Dodge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9508427Abstract: Some embodiments include apparatuses and methods having first conductive lines, second conductive lines, a memory array including memory cells, each of the memory cells coupled between one of the first conductive lines and one of the second conductive lines. At least one of such apparatuses and methods can include a module configured to cause a first current from a first current source and a second current from a second current source to flow through a selected memory cell among the memory cells during an operation of storing information in the selected memory cell. Other embodiments including additional apparatuses and methods are described.Type: GrantFiled: June 22, 2015Date of Patent: November 29, 2016Assignee: Micron Technology, Inc.Inventor: Richard Dodge
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Patent number: 9230643Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.Type: GrantFiled: October 30, 2014Date of Patent: January 5, 2016Assignee: MICRON TECHNOLOGY, INC.Inventors: Hernan Castro, Timothy C. Langtry, Richard Dodge, Ilya Karpov
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Publication number: 20150287457Abstract: Some embodiments include apparatuses and methods having first conductive lines, second conductive lines, a memory array including memory cells, each of the memory cells coupled between one of the first conductive lines and one of the second conductive lines. At least one of such apparatuses and methods can include a module configured to cause a first current from a first current source and a second current from a second current source to flow through a selected memory cell among the memory cells during an operation of storing information in the selected memory cell. Other embodiments including additional apparatuses and methods are described.Type: ApplicationFiled: June 22, 2015Publication date: October 8, 2015Inventor: Richards Dodge
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Patent number: 9064566Abstract: Some embodiments include apparatuses and methods having first conductive lines, second conductive lines, a memory array including memory cells, each of the memory cells coupled between one of the first conductive lines and one of the second conductive lines. At least one of such apparatuses and methods can include a module configured to cause a first current from a first current source and a second current from a second current source to flow through a selected memory cell among the memory cells during an operation of storing information in the selected memory cell. Other embodiments including additional apparatuses and methods are described.Type: GrantFiled: March 17, 2014Date of Patent: June 23, 2015Assignee: Micron Technology, Inc.Inventor: Richard Dodge
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Publication number: 20150055408Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.Type: ApplicationFiled: October 30, 2014Publication date: February 26, 2015Inventors: Hernan Castro, Timothy C. Langtry, Richard Dodge, IIya Karpov
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Patent number: 8891319Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.Type: GrantFiled: November 30, 2010Date of Patent: November 18, 2014Assignee: Micron Technology, Inc.Inventors: Hernan Castro, Timothy C. Langtry, Richard Dodge, Ilya Karpov
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Publication number: 20140211543Abstract: Some embodiments include apparatuses and methods having first conductive lines, second conductive lines, a memory array including memory cells, each of the memory cells coupled between one of the first conductive lines and one of the second conductive lines. At least one of such apparatuses and methods can include a module configured to cause a first current from a first current source and a second current from a second current source to flow through a selected memory cell among the memory cells during an operation of storing information in the selected memory cell. Other embodiments including additional apparatuses and methods are described.Type: ApplicationFiled: March 17, 2014Publication date: July 31, 2014Applicant: Micron Technology, Inc.Inventor: Richard Dodge
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Patent number: 8675423Abstract: Some embodiments include apparatuses and methods having first conductive lines, second conductive lines, a memory array including memory cells, each of the memory cells coupled between one of the first conductive lines and one of the second conductive lines. At least one of such apparatuses and methods can include a module configured to cause a first current from a first current source and a second current from a second current source to flow through a selected memory cell among the memory cells during an operation of storing information in the selected memory cell. Other embodiments including additional apparatuses and methods are described.Type: GrantFiled: May 7, 2012Date of Patent: March 18, 2014Assignee: Micron Technology, Inc.Inventor: Richard Dodge
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Publication number: 20130294153Abstract: Some embodiments include apparatuses and methods having first conductive lines, second conductive lines, a memory array including memory cells, each of the memory cells coupled between one of the first conductive lines and one of the second conductive lines. At least one of such apparatuses and methods can include a module configured to cause a first current from a first current source and a second current from a second current source to flow through a selected memory cell among the memory cells during an operation of storing information in the selected memory cell. Other embodiments including additional apparatuses and methods are described.Type: ApplicationFiled: May 7, 2012Publication date: November 7, 2013Applicant: MICRON TECHNOLOGY, INC.Inventor: Richard Dodge
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Patent number: 8431922Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: GrantFiled: May 31, 2012Date of Patent: April 30, 2013Assignee: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Patent number: 8374022Abstract: A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.Type: GrantFiled: December 21, 2009Date of Patent: February 12, 2013Assignee: Intel CorporationInventors: Timothy C. Langtry, Richard Dodge, Hernan Castro, Derchang Kau, Stephen Tang, Jeremy Hirst
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Publication number: 20120241704Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: ApplicationFiled: May 31, 2012Publication date: September 27, 2012Applicant: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Patent number: 8211742Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: GrantFiled: September 15, 2010Date of Patent: July 3, 2012Assignee: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Publication number: 20120134202Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices.Type: ApplicationFiled: November 30, 2010Publication date: May 31, 2012Applicant: Micron Technology, Inc.Inventors: Hernan Castro, Timothy C. Langtry, Richard Dodge, IIya Karpov
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Publication number: 20110149628Abstract: A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.Type: ApplicationFiled: December 21, 2009Publication date: June 23, 2011Inventors: Timothy C. Langtry, Richard Dodge, Hernan Castro, Derchang Kau, Stephen Tang, Jeremy Hirst
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Publication number: 20110003454Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: ApplicationFiled: September 15, 2010Publication date: January 6, 2011Applicant: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Patent number: 7816660Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: GrantFiled: April 6, 2006Date of Patent: October 19, 2010Assignee: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Publication number: 20070096072Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: ApplicationFiled: April 6, 2006Publication date: May 3, 2007Applicant: STMicroelectronics S.r.I.Inventors: Richard Dodge, Guy Wicker
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Publication number: 20070070734Abstract: An embodiment of the present invention is a technique to provide a reconfigurable repair circuit in a memory device. A table structure contains a plurality of entries, each entry having a defective address word and a redundant address word. The redundant address word corresponds to a redundant block and is generated in response to a memory access to a defective input/output (I/O) line in a memory block of the memory device. A decoding circuit decodes the redundant address word to select a redundant I/O line in the redundant block to replace the defective I/O line.Type: ApplicationFiled: September 29, 2005Publication date: March 29, 2007Inventors: Pochang Hsu, Richard Dodge
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Publication number: 20060289847Abstract: A phase change memory may be formed with a chalcogenide layer that contains titanium. The titanium reduces the crystallization time. Set state resistance may also be decreased, thereby reducing the access time of the semiconductor memory, in some embodiments.Type: ApplicationFiled: June 28, 2005Publication date: December 28, 2006Inventor: Richard Dodge