Abstract: A method is described for converting an existing die, originally designed for a non-chip-scale package, to a chip-scale package die, where the die's bonding pads are located in positions within a defined grid of candidate positions. In the first step, the die's layout, comprising its outer boundaries and areas needed to be electrically connected to bonding pads, are shifted relative to a grid of candidate positions for the bonding pads until an optimal alignment is identified. Bonding pads positions on the die are then selected corresponding to optimum grid positions within the outer boundaries of the die. The die is then fabricated using the original masks to form at least the semiconductor regions and using a new set of masks for defining the new locations of the bonding pads for the chip-scale package. The chip-scale package is then bonded to a PCB using chip-scale package technology.

Abstract: A method is described for converting an existing die, originally designed for a non-chip-scale package, to a chip-scale package die, where the die's bonding pads are located in positions within a defined grid of candidate positions. In the first step, the die's layout, comprising its outer boundaries and areas needed to be electrically connected to bonding pads, are shifted relative to a grid of candidate positions for the bonding pads until an optimal alignment is identified. Bonding pads positions on the die are then selected corresponding to optimum grid positions within the outer boundaries of the die. The die is then fabricated using the original masks to form at least the semiconductor regions and using a new set of masks for defining the new locations of the bonding pads for the chip-scale package. The chip-scale package is then bonded to a PCB using chip-scale package technology.

Abstract: In one embodiment, relatively thin but wide metal bus strips overlying a high power FET are formed to conduct current to the source and drain narrow metal strips. A passivation layer is formed over the surface of the FET, and the passivation layer is etched to expose almost the entire top surface of the bus strips. A copper seed layer is then formed over the surface of the wafer, and a mask is formed to expose only the seed layer over the bus strips. The seed layer over the bus strips is then copper or gold electroplated to deposit a very thick metal layer, which effectively merges with the underlaying metal layer, to reduce on-resistance. The plating metal does not need to be passivated due to its thickness and wide line/space. Other techniques may also be used for depositing a thick metal over the exposed bus strips.

Abstract: In one embodiment, relatively thin but wide metal bus strips overlying a high power FET are formed to conduct current to the source and drain narrow metal strips. A passivation layer is formed over the surface of the FET, and the passivation layer is etched to expose almost the entire top surface of the bus strips. A copper seed layer is then formed over the surface of the wafer, and a mask is formed to expose only the seed layer over the bus strips. The seed layer over the bus strips is then copper or gold electroplated to deposit a very thick metal layer, which effectively merges with the underlaying metal layer, to reduce on-resistance. The plating metal does not need to be passivated due to its thickness and wide line/space. Other techniques may also be used for depositing a thick metal over the exposed bus strips.

Abstract: An apparatus for improved detection of underground well kicks, preferably comprising a first acoustic sensor mounted on the top drive of a drilling rig in acoustic contact with a liquid level within a drill string which is generally located within a wellbore, a second acoustic sensor in a trip tank connected to the wellbore, and a drawworks position indicator. The acoustic sensors detect signals reflected from liquid level interfaces allowing calculation of injected liquid volumes from the trip tank into the wellbore and liquid volume changes within the drill string. The drawworks sensor allows calculation of tubular volumes removed from the wellbore over time. Comparison or totaling of calculated volumes allows early detection of unwanted fluid fluxes between the wellbore and an underground formation.

Abstract: A toilet cleaning block that releases a halogen containing sanitizing agent in a controlled, substantially constant rate for about 2 to about 4 months of constant contact with water and is then completely dissolved in the water comprises an admixture of about 50% to about 80% by weight of a halogen containing sanitizing agent, about 20% to about 40% by weight of a bulking agent such as aluminum hydroxide, about 0% to about 20% by weight sodium bicarbonate, and about 1 to about 20% by weight of a sacrificial dissolution rate regulating agent such as sodium chloride.

Abstract: A toilet cleaning block that releases a halogen containing sanitizing agent in a controlled, substantially constant rate for about 2 to about 4 months of constant contact with water and is then completely dissolved in the water comprises an admixture of about 50% to about 80% by weight of a halogen containing sanitizing agent, about 20% to about 40% by weight of a bulking agent such as aluminum hydroxide and about 1 to about 20% by weight of a sacrificial dissolution rate regulating agent such as sodium chloride.