Patents by Inventor Richard Edward Palmer
Richard Edward Palmer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9632409Abstract: The present disclosure relates to novel fullerene derivatives, positive and negative photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for high speed, fine pattern processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays, electron beam and other charged particle rays.Type: GrantFiled: May 21, 2014Date of Patent: April 25, 2017Assignee: Irresistible Materials LTDInventors: Alex Phillip Graham Robinson, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang
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Publication number: 20160139506Abstract: The present disclosure relates to novel fullerene derivatives, positive and negative photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for high speed, fine pattern processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays, electron beam and other charged particle rays.Type: ApplicationFiled: May 21, 2014Publication date: May 19, 2016Inventors: Alex Philip Graham ROBINSON, Richard Edward PALMER, Andreas FROMMHOLD, Dongxu YANG
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Patent number: 9323149Abstract: The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Negative photosensitive compositions are also disclosed.Type: GrantFiled: February 24, 2014Date of Patent: April 26, 2016Assignee: IRRESISTIBLE MATERIALS LTDInventors: Alex Philip Graham Robinson, Jon Andrew Preece, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang, Alexandra McClelland, Drew Athans, Xiang Xue
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Patent number: 9256126Abstract: The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.Type: GrantFiled: October 31, 2013Date of Patent: February 9, 2016Assignee: IRRESISTIBLE MATERIALS LTDInventors: Alex Philip Graham Robinson, Jon Andrew Preece, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang, Alexandra McClelland, Drew Athens, Xiang Xu
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Publication number: 20140255849Abstract: The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Negative photosensitive compositions are also disclosed.Type: ApplicationFiled: February 24, 2014Publication date: September 11, 2014Inventors: Alex Philip Graham Robinson, Jon Andrew Preece, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang, Alexandra McClelland, Drew Athans, Xiang Xue
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Publication number: 20140134843Abstract: The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.Type: ApplicationFiled: October 31, 2013Publication date: May 15, 2014Inventors: Alex Philip Graham Robinson, Jon Andrew Preece, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang, Alexandra McClelland, Drew Athens, Xiang Xu
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Patent number: 8034546Abstract: The use as a resist material of a methanofullerene derivative having a plurality of open-ended addends, and to a method for forming a patterned resist layer on a substrate using the methanofullerene derivatives. The methanofullerene derivatives can be represented by the formal C2x(CR1R2)m where x is at least 10, m is at least 2, each addend represented by CR1R2 is the same or different, and wherein each R1 and R2 is each a monovalent organic group, or a divalent organic group which forms a ring structure by being joined to the fullerene shell, or where both R1 and R2 of an addend are divalent groups, they may be mutually joined to form a ring structure, save that at least two of R1 or two of R2 are monovalent, or a mixture of such derivatives. The use of any methanofullerene derivative which has been chemically amplified for formation of a patterned resist layer.Type: GrantFiled: September 19, 2005Date of Patent: October 11, 2011Assignee: The University of BirminghamInventors: Alex Robinson, Jon Andrew Preece, Richard Edward Palmer
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Patent number: 7670749Abstract: A method for the formation of a patterned resist layer on a substrate surface by patternwise irradiation with actinic radiation. The first step of the method is formation of a coating layer comprising a substituted triphenylene compound having a diameter of between 1 and 3 nm, a sensitizer which increases the sensitivity of the exposed layer to the actinic radiation used in a subsequent irradiation step and a cross-linker on the substrate surface. Subsequently the coating layer is irradiated patternwise, and unirradiated areas of the coating layer are removed. A resist material comprising a solution of: (i) as the principal resist material a triphenylene derivative having a diameter of from 1 to 3 rim, (ii) a sensitizer which increases the sensitivity of the resist material to actinic radiation, and (iii) a cross-linker capable of cross-linking molecules of the triphenyl derivative, the cross-linker optionally being constituted by a moiety attached to the triphenylene derivative.Type: GrantFiled: September 19, 2005Date of Patent: March 2, 2010Assignee: The University of BirminghamInventors: Richard Edward Palmer, Alex Robinson, Jon Andrew Preece
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Publication number: 20080118874Abstract: The use as a resist material of a methanofullerene derivative having a plurality of open-ended addends, and to a method for forming a patterned resist layer on a substrate using the methanofullerene derivatives. The methanofullerene derivatives can be represented by the formal C2x(CR1R2)m where x is at least 10, m is at least 2, each addend represented by CR1R2 is the same or different, and wherein each R1 and R2 is each a monovalent organic group, or a divalent organic group which forms a ring structure by being joined to the fullerene shell, or where both R1 and R2 of an addend are divalent groups, they may be mutually joined to form a ring structure, save that at least two of R1 or two of R2 are monovalent, or a mixture of such derivatives. The use of any methanofullerene derivative which has been chemically amplified for formation of a patterned resist layer.Type: ApplicationFiled: September 19, 2005Publication date: May 22, 2008Inventors: Alex Robinson, Jon Andrew Preece, Richard Edward Palmer
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Patent number: 6855926Abstract: A combined surface topography and spectroscopic analysis instrument comprises a scanning tunnelling microscope tip (12); and a sample carrier (58) which supports a sample (10) so that a surface thereto to be analyzed is presented towards the tip (12). The sample carrier (58) and the tip (12) are relative movable to enable the distance between the tip (12) and the surface to be varied in use and the sample surface to be scanned in two dimensions by the tip (12). An electronic analyzer is positioned to detect electrons from the tip (12) which have been back-scattered off the sample surface. A voltage controller (59) enables selective operation of the tip (12) in a first voltage range in scanning tunnelling mode, to enable spatial resolution imaging of the sample surface, and in a second, higher, voltage range in electron field emission mode whereby to permit the electron analyzer to analyze the back-scattered electrons.Type: GrantFiled: January 31, 2001Date of Patent: February 15, 2005Assignee: The University of BirminghamInventors: Richard Edward Palmer, Krister Svensson, Peter Georg Laitenberger, Frederic Festy, Brian John Eves
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Publication number: 20030010911Abstract: A combined surface topography and spectroscopic analysis instrument comprises a scanning tunnelling microscope tip (12); and a sample carrier (58) which supports a sample (10) so that a surface thereof to be analyzed is presented towards the tip (12). The sample carrier (58) and the tip (12) are relative movable to enable the distance between the tip (12) and the surface to be varied in use and the sample surface to be scanned in two dimensions by the tip (12). An electron analyzer is positioned to detect electrons from the tip (12) which have been back-scattered off the sample surface. A voltage controller (59) enables selective operation of the tip (12) in a first voltage range in scanning tunnelling mode, to enable spatial resolution imaging of the sample surface, and in a second, higher, voltage range in electron field emission mode whereby to permit the electron analyzer to analyze the back-scattered electrons.Type: ApplicationFiled: July 25, 2002Publication date: January 16, 2003Inventors: Richard Edward Palmer, Krister Svensson, Peter Georg Laitenberger, Frederic Festy, Brian John Eves
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Patent number: 6503688Abstract: A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitized and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2×10−3 C/cm2, and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3×10−4 and 2×10−3 C/cm2. The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.Type: GrantFiled: August 3, 2001Date of Patent: January 7, 2003Assignees: The University of Birmingham, National Institute of Advanced Industrial Science and TechnologyInventors: Jon Andrew Preece, Richard Edward Palmer, Alexander Phillip Robinson, Toshihiko Kanayama, Tetsuya Tada
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Patent number: 6117617Abstract: A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradiation in a dose of, for example, 1.times.10.sup.-4 C/cm.sup.2 or larger. The thus formed resist layer is highly resistant against dry etching to ensure utilizability of the method in the fine patterning work for the manufacture of semiconductor devices.Type: GrantFiled: September 18, 1998Date of Patent: September 12, 2000Assignees: Japan as represented by Director of Agency of Industrial Science and Technology, The University of BirminghamInventors: Toshihiko Kanayama, Tetsuya Tada, Richard Edward Palmer, Alexander Phillip Robinson