Abstract: A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level. The skin impurity level is average impurity level from 0 nm to 100 nm of depth into the outer surface portion, the bulk impurity level is measured at a depth of at least 3 microns into the outer surface portion, and the skin impurity level is not greater than 80% of the bulk impurity level.

Abstract: A semiconductor processing component can include SiC, wherein the semiconductor processing component has an impurity ratio less than 34:1. The impurity ratio can be a ratio of a first average impurity concentration to a second impurity level, wherein the first average impurity concentration is an average impurity concentration of a impurity from an exposed surface of the semiconductor processing component to a depth of 0.2 microns from the exposed surface, and the second average impurity concentration is an average impurity concentration of the impurity from a depth of 0.8 microns from the exposed surface to a depth of 1.0 micron from the exposed surface.

Abstract: A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level.

Abstract: A high purity ceramic article having a typical pore size of at least about 15 ?m and an active impurity concentration of less than about 400 ppm can be prepared by molding ceramic powder, sintering to vaporize any active impurity components, washing to dissolve any remaining active impurity components with an acid solution, and oxidizing to remove any residual active impurity components.

Abstract: A horizontal wafer boat for maintaining semiconductor wafers during wafer processing is disclosed. The wafer boat is configured to reduce the likelihood wafer slip when wafers are heated to processing temperatures of about 1000° C. and above.

Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.

Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.

Abstract: A semiconductor processing component formed of SiC, wherein an outer surface portion of the component has a surface impurity level that is not greater than ten times a bulk impurity level of the outer surface portion.

Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer

Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer

Abstract: A wafer carrier for supporting a plurality of wafers, including a plurality of slots provided in a cradle, the cradle being formed of silicon carbide and having an oxide layer overlying the silicon carbide.

Abstract: A silicon carbide cantilever paddle for use in semiconductor wafer processing is disclosed. The cantilever paddle is characterized in that it exhibits acceptable deflection characteristics over the entire range of weight loads with which it may be used, and that it is compatible with existing clamp systems. This is achieved by providing a “two-stage” handle having a large diameter section and a small diameter section, the sections being separated by a handle transition zone.

Abstract: A grinding wheel is provided for grinding the fire deck of an engine block. The grinding wheel, includes a first annular grinding element disposed concentrically with the wheel on a backing plate. The first annular grinding element includes a first abrasive component of either metal brazed single layer abrasive components or abrasive components comprising grain bonded in a porous matrix having about 55 to 80 volume percent interconnected porosity. The wheel preferably has a second annular grinding element disposed concentrically inward of the first annular grinding element. The first annular grinding element preferably comprises a single layer of relatively course diamond abrasive component brazed on a metallic substrate, while the second annular grinding element preferably comprises a single layer of relatively fine diamond abrasive components brazed on a similar substrate.

Abstract: A method is provided for machining the fire deck of an engine block. The method includes providing a grinding wheel having an outer annular grinding element disposed concentrically or the wheel may be provided with an inner annular grinding element disposed concentrically inward of an outer element. The outer element comprises a single layer of relatively coarse diamond abrasive brazed on a metallic substrate, while the inner element comprises a single layer of relatively fine diamond abrasive brazed on a similar substrate. The outer grinding element and the inner element if utilized, is formed as a discrete unit individually fastened to a backing plate to facilitate independent height adjustment of the elements relative the backing plate. The method further comprises orienting the grinding wheel with its axis of rotation at a predetermined oblique angle a relative the fire deck.