Patents by Inventor Richard F. Levine

Richard F. Levine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110171025
    Abstract: Wind turbine rotors and wind turbine blades having the startup capability of a drag-type turbine and the increased tip speed of a lift-type turbine are provided. The rotor includes a plurality of elongated blades, each of the blades having a first portion mounted to a mast at a first radial distance from the mast and a second portion mounted to the mast at a second radial distance from the mast, less than the first radial distance. Each blade includes a first chord length, a second chord length, and a third chord length between the first and second chord length. The third chord length is less than the first chord length and less than the second chord length. The blades may be helical. Aspects of the invention provide a self-starting, Darrieus-type rotor for enhanced wind energy capture.
    Type: Application
    Filed: January 11, 2011
    Publication date: July 14, 2011
    Applicant: WIND PRODUCTS INC.
    Inventors: Richard F. LEVINE, Russell M. TENCER, Sander MERTENS
  • Patent number: 4028150
    Abstract: A substantial increase in the reliability of metal-oxide-semiconductor field effect transistor (MOSFET) devices having a thin gate dielectric is achieved by providing a thin film of phosphosilicate glass (PSG) on the thin dielectric and completely covering the PSG layer with the gate metallization. The metallization extends over a thick film of phosphosilicate glass which is disposed on the thick insulator covering the source and drain regions.
    Type: Grant
    Filed: February 9, 1976
    Date of Patent: June 7, 1977
    Assignee: IBM Corporation
    Inventors: Robert Henry Collins, Richard F. Levine, William D. North, Gerald D. O'Rourke, Gerald R. Parker
  • Patent number: 4027321
    Abstract: A substantial increase in the reliability of metal-oxide-semiconductor field effect transistor (MOSFET) devices having a thin gate dielectric is achieved by providing a thin film of phosphosilicate glass (PSG) on the thin dielectric and completely covering the PSG layer with the gate metallization. The metallization extends over a thick film of phosphosilicate glass which is disposed on the thick insulator covering the source and drain regions.
    Type: Grant
    Filed: April 29, 1976
    Date of Patent: May 31, 1977
    Assignee: IBM Corporation
    Inventors: Robert Henry Collins, Richard F. Levine, William D. North, Gerald D. O'Rourke, Gerald R. Parker