Abstract: Gas plasma system and process which are particularly suitable for photoresist stripping and descumming operations. A wafer is placed on a heated platen in a processing chamber and is lifted away from the platen to control thermal contact between the wafer and the platen. The front side of the wafer is also heated with radiant heat energy, and the temperature of the platen is adjusted to control the temperature of the wafer. In the disclosed embodiments, a gas plasma is generated outside the processing chamber and introduced into the chamber through a gas distribution plate which is also transparent to the radiant heat energy.

Abstract: Process and gas mixture for etching aluminum in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the anisotropic character of the etch. A stable uniform plasma is generated at relatively high pressure and power levels, and this provides substantially faster removal of aluminum than has heretofore been possible in planar reactors.

Abstract: Process and gas mixture for etching silicon dioxide and/or silicon nitride in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the selectivity of the etch. The process is carried out at relatively high pressure and power levels and provides substantially faster removal of silicon dioxide and/or silicon nitride than has heretofore been possible in planar reactors.

Abstract: Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each wafer from the conveyor to a processing position adjacent to a stationary electrode. Gas is admitted to the chamber, and the electrodes are energized to ionize the gas and form a plasma for processing the wafer between the electrodes.

Abstract: Process and apparatus for carrying out a reaction, such as etching aluminum, in the glow discharge of a gas plasma. The plasma is formed between a pair of closely spaced electrodes, and a distributed impedance is provided in series with the plasma to assure uniform distribution of the ionizing current and the glow discharge of the plasma throughout the region between the electrodes.

Abstract: Process for etching SiO.sub.2 with hydrogen fluoride gas, utilizing an organic material such as negative photoresist as a catalyst. In one embodiment, the negative photoresist is applied directly to the portions of the SiO.sub.2 to be removed, and in another the negative photoresist is spaced away from the SiO.sub.2. In some embodiments, positive photoresist is applied to the portions of the SiO.sub.2 which are to be retained.