Abstract: A method for polishing a copper pattern on a workpiece is disclosed. The invention provides for selective micro-polishing of local regions of divergence of the profile of the copper pattern, to a predetermined state wherein the profile more closely approximates the profile of surrounding surfaces. Thereafter, the entire workpiece surface is polished in accordance with a predetermined polish profile. In the case of semiconductor wafers, local regions of a copper layer at the periphery of the wafer often have a thickness which is outside the thickness range for which a chemical mechanical polishing (CMP) tool can effectively polish the copper layer in accordance with a predetermined polish profile.