Patents by Inventor Richard Frederick Rutz

Richard Frederick Rutz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of an epitaxial layer diode in aluminum nitride on sapphire
    Patent number: 4095331
    Abstract: An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of aluminum nitride and heating said composite in a particular atmosphere, resulting in the deposition of layers of aluminum nitride onto said coated substrate.
    Type: Grant
    Filed: November 4, 1976
    Date of Patent: June 20, 1978
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Richard Frederick Rutz
  • AlN masking for selective etching of sapphire
    Patent number: 4008111
    Abstract: A method is disclosed for forming holes and depressions in aluminum oxide, including its sapphire form and spinels by etching using AlN as a maskant. This method is featured by the epitaxial deposition of an AlN film on a sapphire body, for instance. The AlN film is etched in a predetermined pattern and heat treated. The etchants used may be either H.sub.2 or molten Al which will selectively attack the sapphire substrate in the regions exposed by the AlN mask.
    Type: Grant
    Filed: December 31, 1975
    Date of Patent: February 15, 1977
    Assignee: International Business Machines Corporation
    Inventor: Richard Frederick Rutz