Abstract: A vacuum cleaner including a debris separator having a cyclonic separator including a cylindrical wall having a first end and a second end, the cylindrical wall located in within the housing, the cyclonic separator further including a dirty air inlet, a clean air outlet, an end wall at the first end of the cylindrical wall, and a debris outlet adjacent the second end of the cylindrical wall. The debris separator further includes a lid coupled to an upper end of the housing, a debris collection chamber located within the housing and in fluid communication with the debris outlet of the cyclonic separator, and a door coupled to a lower end of the housing to empty the debris collection chamber through the lower end of the housing. A portion of the cyclonic separator is removable from the housing through the lower end of the housing.

Abstract: A vacuum cleaner having a vacuum cleaner housing, a suction nozzle, a motor configured to generate a suction force through the suction nozzle, a motor housing at least partially enclosing the motor and coupled to the vacuum cleaner housing, and a dirt collection assembly removably coupled to the vacuum cleaner housing. The dirt collection assembly includes a dirt cup, a handle for removing the dirt collection assembly, and a motor shroud at least partially enclosing the motor housing.

Abstract: An optoelectronic device comprises electon donor D and acceptor A semiconducting species and an intervening co-oligomeric or copolymeric species provided to alter the energy transfer characteristics of excitons to or from the interface between the said electron acceptor and donor species. The intervening species may be of the form Am-Xn-Do, where m, n and o are each 0 or a positive integer and at least two of A, X and D are present.

Abstract: A photovoltaic (PV) device having an electron donor region and electron acceptor region, the donor and acceptor regions comprising conjugated polymers and/or molecular semiconductors, ion pairs being, preferably preferentially, located at, near or towards the interface between the donor and acceptor regions.

Abstract: A process for manufacturing an electrical device, the process comprising the steps: providing a substrate; bringing a stamp into contact with the substrate whereby areas of the substrate contacted by the stamp have decreased wettability; and depositing a liquid comprising an electrically active material over areas of the substrate located between the areas of decreased wettability.

Abstract: A process for manufacturing an electrical device, the process comprising the steps: providing a substrate; bringing a stamp into contact with the substrate whereby areas of the substrate contacted by the stamp have decreased wettability; and depositing a liquid comprising an electrically active material over areas of the substrate located between the areas of decreased wettability.

Abstract: A polymer formed from optionally substituted first repeat units of formula (I) wherein Ar is selected from (a) aromatic hydrocarbon substituted with at least one electron withdrawing group or electron withdrawing heteroaryl. The polymers have application in electroluminescent devices.

Abstract: A polymer formed from optionally substituted first repeat units of formula (I) wherein Ar is selected from (a) aromatic hydrocarbon substituted with at least one electron withdrawing group or electron withdrawing heteroaryl. The polymers have application in electroluminescent devices.

Abstract: An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EAsemicond; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterised in that the bulk concentration of trapping groups in the gate dielectric layer is less than 1018cm?3, where a trapping group is a group having (i) an electron affinity EAX greater than or equal to EAsemicondand/or (ii) a reactive electron affinity EArxngreater than or equal to (EAsemicond. ?2eV).

Abstract: An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode.

Abstract: An organic electronic device comprises at least two electrodes and a semiconducting layer comprising a mixture of at least one hole-transporting semiconducting material and at least one electron-transporting semiconducting material, wherein at least one of said semiconducting materials is in the form of semiconducting polymer brushes which are attached to the surface of at least one of said electrodes and are in contact with at least one of said other semiconducting materials. Also provided is an organic electronic device comprising at least two electrodes and a semiconducting layer comprising at least one hole-transporting or electron-transporting semiconducting material, wherein said at least one semiconducting material is in the form of semiconducting polymer brushes which are attached to the surface of at least one of said electrodes. Processes for the manufacture of said devices are also provided.

Abstract: A method of forming a polymer device including the steps of: (i) depositing on a substrate a solution comprising a polymer or oligomer and a crosslinking moiety, to form a layer; (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer, characterized in that the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 to 5 mol % based on the total number of moles of repeat units of the polymer or oligomer and the crosslinking moiety in the solution.

Abstract: A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric laye

Abstract: A display device comprising a driver circuit which modulates the duty cycle of the on-state of a pixel during a frame period. Preferably the driver circuit comprises a comparator and more preferably the comparator is formed of thin film transistors constituting a differential pair and an inverter. Also provided is a method of driving a display device comprising the step of modulating the duty cycle of the on-state of a pixel during a frame period. Beneficially the display device is an organic electroluminescent active matrix display device.

Abstract: A method for forming an electronic device, comprising: forming a first conductive or semiconductive layer; forming a sequence of at least on insulating layer and at least one semiconducting layer over the first conductive or semiconductive layer; locally depositing solvents at a localized region of the insulating layer so as to dissolve the sequence of insulating and semiconducting layers in the region to leave a void extending through the sequence of layer; and depositing conductive or semiconductive material in the void.

Abstract: A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.

Abstract: An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers from the first charge carrier injecting layer; a second component for accepting negative charge carriers from the second charge carrier injecting layer; and a third, organic light-emissive component for generating light as a result of combination of charge carriers from the first and second components; at least one of the first, second and third components forming a type II semiconductor interface with another of the first, second and third components.

Abstract: An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers from the first charge carrier injecting layer; a second component for accepting negative charge carriers from the second charge carrier injecting layer; and a third, organic light-emissive component for generating light as a result of combination of charge carriers from the first and second components; at least one of the first, second and third components forming a type II semiconductor interface with another of the first, second and third components.

Abstract: A polymer formed from optionally substituted first repeat units of formula (I) wherein Ar is selected from (a) aromatic hydrocarbon substituted with at least one electron withdrawing group or electron withdrawing heteroaryl. The polymers have application in electroluminescent devices.

Abstract: Optical devices fabricated from solvent processible polymers suffer from susceptibility to solvents and morphological changes. A semiconductive polymer capable of luminescence in an optical device is provided. The polymer comprises a luminescent film-forming solvent processible polymer which contains cross-linking so as to increase its molar mass and to resist solvent dissolution, the cross-linking being such that the polymer retains semiconductive and luminescent properties.