Abstract: In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

Abstract: In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

Abstract: In one implementation a wafer processing method includes filling a plurality of through-resist recessed features with a metal, such that a ratio of fill rate of a first feature to a fill rate of a second feature is R1; followed by electrochemically removing metal such that a ratio of metal removal rate from the first feature to the metal removal rate from the second feature is greater than R1, improving the uniformity of the fill. In some embodiments the method includes contacting an anodically biased substrate with an electrolyte such that the electrolyte has a transverse flow component in a direction that is substantially parallel to the working surface of the substrate. The method can be implemented in an apparatus that is configured for generating the transverse flow at the surface of the substrate. In some implementations the method makes use of distinct electrochemical regimes to achieve improvement in uniformity.

Abstract: In one implementation a wafer processing method includes filling a plurality of through-resist recessed features with a metal, such that a ratio of fill rate of a first feature to a fill rate of a second feature is R1; followed by electrochemically removing metal such that a ratio of metal removal rate from the first feature to the metal removal rate from the second feature is greater than R1, improving the uniformity of the fill. In some embodiments the method includes contacting an anodically biased substrate with an electrolyte such that the electrolyte has a transverse flow component in a direction that is substantially parallel to the working surface of the substrate. The method can be implemented in an apparatus that is configured for generating the transverse flow at the surface of the substrate. In some implementations the method makes use of distinct electrochemical regimes to achieve improvement in uniformity.

Abstract: An apparatus for automatically generating a metal-containing electrolyte (e.g., an electrolyte containing Sn2+ ions and an acid) includes an anolyte chamber configured to house an active anode (e.g., a metallic tin anode), an anolyte, and a sensor (e.g., one or more sensors) measuring a concentration of metal ions in the anolyte; a catholyte chamber configured to house a hydrogen-generating cathode and a catholyte; and a controller having program instructions for processing data from the sensor and for automatically generating an electrolyte having metal ions in a target concentration range in the anolyte chamber. In some embodiments, the apparatus is in communication with an electroplating apparatus and is capable to deliver the generated electrolyte to the electroplating apparatus on demand. In some embodiments, a densitometer and a conductivity meter are together used as sensors, and the apparatus is configured to generate low alpha tin electrolyte containing an acid.

Abstract: An apparatus for automatically generating a metal-containing electrolyte (e.g., an electrolyte containing Sn2+ ions and an acid) includes an anolyte chamber configured to house an active anode (e.g., a metallic tin anode), an anolyte, and a sensor (e.g., one or more sensors) measuring a concentration of metal ions in the anolyte; a catholyte chamber configured to house a hydrogen-generating cathode and a catholyte; and a controller having program instructions for processing data from the sensor and for automatically generating an electrolyte having metal ions in a target concentration range in the anolyte chamber. In some embodiments, the apparatus is in communication with an electroplating apparatus and is capable to deliver the generated electrolyte to the electroplating apparatus on demand. In some embodiments, a densitometer and a conductivity meter are together used as sensors, and the apparatus is configured to generate low alpha tin electrolyte containing an acid.

Abstract: An apparatus for automatically generating a metal-containing electrolyte (e.g., an electrolyte containing Sn2+ ions and an acid) includes an anolyte chamber configured to house an active anode (e.g., a metallic tin anode), an anolyte, and a sensor (e.g., one or more sensors) measuring a concentration of metal ions in the anolyte; a catholyte chamber configured to house a hydrogen-generating cathode and a catholyte; and a controller having program instructions for processing data from the sensor and for automatically generating an electrolyte having metal ions in a target concentration range in the anolyte chamber. In some embodiments, the apparatus is in communication with an electroplating apparatus and is capable to deliver the generated electrolyte to the electroplating apparatus on demand. In some embodiments, a densitometer and a conductivity meter are together used as sensors, and the apparatus is configured to generate low alpha tin electrolyte containing an acid.

Abstract: A method and apparatus for separating fluid from exhaust air in a semiconductor cleaning device implements a separator box having at least one mesh layer disposed therein to assist in preventing separated fluid from entering exhaust ducting. The mesh layer reduces the amount of splashing and assists in maintaining an even air flow. Additional layers of mesh may be disposed above the first mesh layer to further assist in reducing fluid from entering exhaust ducting.