Abstract: A power semiconductor device includes a semiconductor die with a power transistor on a semiconductor substrate, a plurality of wiring layers vertically spaced apart from one another and the transistor, and a plurality of conductive bumps on each wire of the wiring layer spaced farthest from the substrate. Each wire of the layer closest to the substrate is electrically connected to a terminal of the transistor. The wires of the layer spaced farthest from the substrate extend in generally parallel lines and are electrically connected to a terminal of the transistor through each underlying layer. An additional metal layer having a thickness of at least 50 ?m is connected to the die so that contact regions of the additional metal layer are electrically connected to the bumps of the die.