Abstract: A workpiece transfer assembly for manipulating one or more workpieces, such as semiconductor wafers includes a plurality of coacting arms that include one or more arcuate portions corresponding to an outer diameter of a workpiece. The arcuate portion has a workpiece engaging surface adapted to engage an outer edge of the workpiece. At least one of the coacting arms includes a flexure assembly that allows deformation of the workpiece engaging surface in a direction away from the workpiece in response to pressure on the outer edge of the workpiece from the workpiece engaging surface.

Abstract: A workpiece transfer assembly for manipulating one or more workpieces, such as semiconductor wafers includes a plurality of coacting arms that include one or more arcuate portions corresponding to an outer diameter of a workpiece. The arcuate portion has a workpiece engaging surface adapted to engage an outer edge of the workpiece. At least one of the coacting arms includes a flexure assembly that allows deformation of the workpiece engaging surface in a direction away from the workpiece in response to pressure on the outer edge of the workpiece from the workpiece engaging surface.

Abstract: A workpiece is supported on a gas cushion to reduce mechanical stresses on the workpiece during processing. A plenum having a workpiece support flange for receiving the workpiece is connected to a gas supply. When gas flows into the plenum and pressure increases sufficiently to lift the workpiece, the workpiece is lifted and the gas flows out of the plenum between the flange and the workpiece edge. The workpiece is thus supported above the flange by the gas during processing.

Abstract: A wafer support position control mechanism selectively positions a semiconductor wafer along an axis of excursion within a process chamber. An elevator tube protrudes through an orifice in the chamber surface and is connected at a first distal end to the wafer support. A compliant, dynamic seal within the orifice engages the elevator tube to form a gas curtain within a gap between the seal and the elevator tube to seal the process chamber. A moveable carriage is connected to the elevator tube at a second distal end for moving the wafer support along the axis of excursion. Rigid mechanical structure couples the second distal end of the elevator tube to the moveable carriage.

Abstract: A transfer system for use with a tool for treating a work-piece at sub-atmospheric pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for treatment of work-pieces placed at a work-piece treatment station within the low pressure region. Multiple work-piece isolation load locks transfer work-pieces, one or two at a time, from a higher pressure region to the lower pressure for treatment and back to said higher pressure subsequent to said treatment. A first robot transfers work-pieces within the low pressure region from the load locks to a treatment station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the multiple work-piece isolation load locks from a source of said work-pieces prior to treatment and to a destination of said work-pieces after said treatment.

Abstract: A wafer support position control mechanism selectively positions a semiconductor wafer along an axis of excursion within a process chamber. An elevator tube protrudes through an orifice in the chamber surface and is connected at a first distal end to the wafer support. A compliant, dynamic seal within the orifice engages the elevator tube to form a gas curtain within a gap between the seal and the elevator tube to seal the process chamber. A moveable carriage is connected to the elevator tube at a second distal end for moving the wafer support along the axis of excursion. Rigid mechanical structure couples the second distal end of the elevator tube to the moveable carriage.

Abstract: A workpiece is supported on a gas cushion to reduce mechanical stresses on the workpiece during processing. A plenum having a workpiece support flange for receiving the workpiece is connected to a gas supply. When gas flows into the plenum and pressure increases sufficiently to lift the workpiece, the workpiece is lifted and the gas flows out of the plenum between the flange and the workpiece edge. The workpiece is thus supported above the flange by the gas during processing.

Abstract: A transfer system for use with a tool for treating a work-piece at sub-atmospheric pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for treatment of work-pieces placed at a work-piece treatment station within the low pressure region. Multiple work-piece isolation load locks transfer work-pieces, one or two at a time, from a higher pressure region to the lower pressure for treatment and back to said higher pressure subsequent to said treatment. A first robot transfers work-pieces within the low pressure region from the load locks to a treatment station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the multiple work-piece isolation load locks from a source of said work-pieces prior to treatment and to a destination of said work-pieces after said treatment.

Abstract: An ultrasonic wire bonding apparatus and method is capable of maintaining a sufficient clearance between the horn and bonding surface, and thereby increase the working area without using a long horn. In the ultrasonic wire bonding apparatus, a capillary is located at the front end of a horn for holding a wire that is directly supported at the front end of the horn. The capillary is long enough to maintain a sufficient clearance between the horn and the bonding surface. Alternatively, a capillary, which is located at the front end of a horn for holding a wire, is short and is supported at the front end of the horn through a joint or extension. The total length of the joint and the capillary is enough to maintain a sufficient clearance between the horn and the bonding surface.