Abstract: A therapeutic exercise device for improving arm mobility and strength is provided. The device can be used by any person but is particularly helpful for infants who suffer from the disease of arthrogryposis. The device includes a base having a first upright leg member and a second upright leg member. The leg members are height-adjustable. The leg members are joined at their upper ends by an upper crossbar member. Preferably, a pair of elastic straps are coupled to the crossbar. The elastic straps can have handles so the infant can reach up and grasp them. The infant can pull downwardly on handles and move the straps. These exercises help infants to improve their strength, range of motion, and sensorimotor development.

Abstract: Provided herein, in some embodiments, are methods and compositions for the production of long single-stranded DNA.

Abstract: A dental implant abutment comprising: a crown seating portion located toward a first end of the abutment; a fixture seating portion located toward a second end of the abutment; and a main body located between the crown seating portion and the fixture seating portion, the main body including an external indexing feature located along an outer perimeter of the main body at a transition between the main body and the crown seating portion, the external indexing feature comprising an elevational variance of the outer perimeter of the main body that mates with a visually identifiable elevational variance of a mating surface of a crown with which the dental implant abutment mates.

Abstract: Disclosed examples include integrated circuits and bipolar transistors with a first region of a first conductivity type in a substrate, a collector region of a second conductivity type disposed in the substrate, and a base region of the first conductivity type extending into the first region. A first emitter region of the second conductivity type extends into the first region and includes a lateral side spaced from and facing the base region. A second emitter region of the second conductivity type extends downward into the first region, abutting the top surface and an upper portion of the first lateral side of the first emitter region to mitigate surface effects and gain degradation caused by hydrogen injection from radiation to provide a radiation hardened bipolar transistor.

Abstract: A semiconductor device containing an NPN bipolar junction transistor may be formed by forming a p-type radiation induced diode structure (RIDS) region in an intrinsic p-type base region of the NPN bipolar junction transistor at a boundary of the intrinsic p-type base region with a dielectric layer over a substrate of the semiconductor device, between an emitter of the NPN bipolar junction transistor and an extrinsic p-type base region of the NPN bipolar junction transistor. The p-type RIDS region has a doping density high enough to prevent inversion of a surface of the p-type RIDS region adjacent to the dielectric layer when trapped charge is accumulated in the dielectric layer, while the intrinsic p-type base region may invert from the trapped charge forming the radiation induced diode structure. The p-type RIDS region is separated from the emitter and from the extrinsic base region by portions of the intrinsic base region.

Abstract: A semiconductor device containing an NPN bipolar junction transistor may be formed by forming a p-type radiation induced diode structure (RIDS) region in an intrinsic p-type base region of the NPN bipolar junction transistor at a boundary of the intrinsic p-type base region with a dielectric layer over a substrate of the semiconductor device, between an emitter of the NPN bipolar junction transistor and an extrinsic p-type base region of the NPN bipolar junction transistor. The p-type RIDS region has a doping density high enough to prevent inversion of a surface of the p-type RIDS region adjacent to the dielectric layer when trapped charge is accumulated in the dielectric layer, while the intrinsic p-type base region may invert from the trapped charge forming the radiation induced diode structure. The p-type RIDS region is separated from the emitter and from the extrinsic base region by portions of the intrinsic base region.

Abstract: A method and system allow for changing (continuously or variably) both a field height and pupil of a beam that illuminates an object field. In one example, the object field can have a pattern generator (e.g., one or more reticles, spatial light modulators, or the like) positioned therein. The system and method for changing both the field height and the pupil can include a field defining element, a pupil defining element, and first and second zoom systems. The field defining element (FDE) can generate a field height of an illumination beam. The first zoom system can allow for changing of the field height of the illumination beam. The pupil defining element (PDE) can generate a pupil of the illumination beam. The second zoom system can allow for changing of the pupil of the illumination beam.