Abstract: Aspects of the invention are directed to chemical and biological molecule sensing devices, methods of fabricating the chemical sensor devices, and methods of using those devices to detect chemical and biological molecules. The chemical sensor device may comprise a chemically-sensitive vertical slit field effect transistor (VeSFET) with a chemical recognition element attached to a gate structure and/or a channel of the VeSFET. The recognition element may be capable of binding to a chemical of interest such that the binding of the chemical to the recognition element results in a modification of current flow of the VeSFET, resulting in a detectable signal. The chemical sensor device may further comprise an amplifier configured to receive the detectable signal and produce an amplified signal, and an analog-to-digital converter (ADC) configured to receive the amplified signal and to produce a digital signal that represents the amplified signal.

Abstract: A method of fabricating a semiconductor device comprises forming, within a single process flow on a silicon on insulator (SOI) wafer, at least one of an n channel, digital VeSFET, a p channel, digital VeSFET, an n channel, analog VeSFET and a p channel, analog VeSFET. The method may further comprise forming, on the SOI wafer, at least one of a JFET, a BJT and a LT-MOM capacitor. The method may further comprise forming the n channel, digital VeSFET, a p channel, digital VeSFET, an n channel, analog VeSFET, and a p channel, analog VeSFET, according to a periodic design based on a unit circle. The method may comprise modifying a design of the semiconductor node, according to a three-dimensional architecture, to form a modified semiconductor node, and fabricating the modified semiconductor node on substrate, along with at least one other node of a different node type.

Abstract: A non-volatile memory device (VeSFlash) comprises a vertical slit field effect transistor (VeSFET) device comprising a semiconductor portion defining a source end, a drain end, and a slit portion between the source end and the drain end. The VeSFlash non-volatile memory device further comprises at least one floating gate coupled to a side of the slit portion through an insulating layer. The floating gate is coupled to a contact through a second insulating layer. The VeSFlash non-volatile memory device further comprises either another floating gate or an independent control gate. In the case of comprising a control gate coupled to a side wall of the slit portion through a third insulating layer, and the control gate further coupled to a second contact, it is configured to accommodate an access signal, and the floating gate configured to accommodate a data signal.

Abstract: Aspects of the invention are directed to chemical and biological molecule sensing devices, methods of fabricating the chemical sensor devices, and methods of using those devices to detect chemical and biological molecules. The chemical sensor device may comprise a chemically-sensitive vertical slit field effect transistor (VeSFET) with a chemical recognition element attached to a gate structure and/or a channel of the VeSFET. The recognition element may be capable of binding to a chemical of interest such that the binding of the chemical to the recognition element results in a modification of current flow of the VeSFET, resulting in a detectable signal. The chemical sensor device may further comprise an amplifier configured to receive the detectable signal and produce an amplified signal, and an analog-to-digital converter (ADC) configured to receive the amplified signal and to produce a digital signal that represents the amplified signal.

Abstract: An improved micro-machined relay is disclosed. The relay includes a micro-machined beam capable of carrying an electric signal and having a contact point on a closure side of the beam. The beam is electrically coupled to a first electrical transmission path and suspended above a second electrical transmission path. An insulation layer resides on a portion of the closure side of the beam and an electrical conductor is coupled to a least a portion of the insulation layer. A potential creator creates a potential between the electrical conductor and the potential creator that is capable of deflecting the beam, so that the contact point comes into contact with the second electrical transmission path. In such an embodiment, the potential creator need not account for the possible signal in the transmission path because the potential creator, which may be a voltage source, is decoupled from the transmission path.

Abstract: An improved micro-machined relay is disclosed. The relay includes a micro-machined beam capable of carrying an electric signal and having a contact point on a closure side of the beam. The beam is electrically coupled to a first electrical transmission path and suspended above a second electrical transmission path. An insulation layer resides on a portion of the closure side of the beam and an electrical conductor is coupled to a least a portion of the insulation layer. A potential creator creates a potential between the electrical conductor and the potential creator that is capable of deflecting the beam, so that the contact point comes into contact with the second electrical transmission path. In such an embodiment, the potential creator need not account for the possible signal in the transmission path because the potential creator, which may be a voltage source, is decoupled from the transmission path.

Abstract: An improved micro-machined relay is disclosed. The relay includes a micro-machined beam capable of carrying an electric signal and having a contact point on a closure side of the beam. The beam is electrically coupled to a first electrical transmission path and suspended above a second electrical transmission path. An insulation layer resides on a portion of the closure side of the beam and an electrical conductor is coupled to a least a portion of the insulation layer. A potential creator creates a potential between the electrical conductor and the potential creator that is capable of deflecting the beam, so that the contact point comes into contact with the second electrical transmission path. In such an embodiment, the potential creator need not account for the possible signal in the transmission path because the potential creator, which may be a voltage source, is decoupled from the transmission path.

Abstract: Processes for preparing contacts on microswitches have been invented. The first is a wet process, involving the use of one or more acids, bases and peroxides, in some formulations diluted in water, to flush the contacts. The second process involves exposing the contacts to plasmas of various gases, including (1) oxygen, (2) a mixture of carbon tetrafluoride and oxygen, or (3) argon.

Abstract: A micromechanical relay is made by surface micromachining techniques. It includes a metallic cantilever beam deflectable by an electrostatic field and a beam contact connected to the beam and electrically insulated from the beam by an insulating segment. During operation, the beam deflects, and the beam contact establishes an electrical contact between two drain electrodes.

Abstract: A micromechanical relay is made by surface micromachining techniques. It includes a metallic cantilever beam deflectable by an electrostatic field and a beam contact connected to the beam and electrically insulated from the beam by an insulating segment. During operation, the beam deflects, and the beam contact establishes an electrical contact between two drain electrodes.

Abstract: An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element.

Abstract: An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element.

Abstract: An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element.

Abstract: Processes for preparing contacts on microswitches have been invented. The first is a wet process, involving the use of one or more acids, bases and peroxides, in some formulations diluted in water, to flush the contacts. The second process involves exposing the contacts to plasmas of various gases, including (1) oxygen, (2) a mixture of carbon tetrafluoride and oxygen, or (3) argon.

Abstract: The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

Abstract: The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which may incorporate electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

Abstract: The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

Abstract: The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

Abstract: A micromechanical electric shunt is fabricated by micromachining according to recent IC fabrication procedures. A plurality of such shunts is incorporated on a single substrate to form novel process station or post identification or signature encoding apparatus for use on a telecommunications bus or the equivalent. Such identification of signature encoding apparatus may be configured for conventional binary coding. Both frequency and current derivative mode apparatus are disclosed.

Abstract: Microminiature resonant sensor structures are prepared according to micromachining/microfabrication techniques, which structures include thin-film deposits of piezoelectric materials. Such piezoelectric deposits may be excited electrically by including metallized conductive paths during fabrication, or optically. The resonant frequency of the sensor structure is varied by subjecting it to a physical variable, or measurand, such as pressure, temperature, flow rate, etc. Similarly, the resonant frequency of the devices may be detected electrically or optically. The microminiature resonant structures include ribbons and wires, hollow beam and cantilevered hollow beams, and single- and double-ended double beam resonant structures such as tuning forks.