Abstract: An integrated circuit die includes a substrate having a front surface and a back surface, wherein the substrate front surface has electrical circuits formed thereon, and the substrate back surface has a plurality of metal layers formed thereon. The plurality of metal layers comprises at least one layer having a thickness of greater than about ten micrometers. The outermost metal layer may be mechanically and thermally bonded to a package using a die attach layer comprising a thermally conductive reflowable material. The invention advantageously facilitates the dissipation of heat from the integrated circuit die.

Abstract: A semiconductor device includes an IC die configured to reduce post-fabrication damage to the device. The IC die is formed such that at least a portion of one or more perimeter edges of the die are beveled by an etching process. The semiconductor device may include a plurality of IC dies, at least one of the IC dies being separated from the semiconductor device by forming one or more v-shaped grooves in an upper surface of the device, the v-shaped grooves defining perimeter edges of the at least one IC die. A back surface of the semiconductor device is removed until at least a portion of the v-shaped grooves are exposed. When the IC die is separated from the semiconductor device in this manner, a sidewall of each of the v-shaped grooves forms a beveled perimeter edge of the separated IC die.

Abstract: A method for attaching at least one IC die to a non-ceramic IC package including a leadframe and a base, the IC package being configured for receiving the at least one IC die, includes attaching the IC die to an upper surface of a thermal carrier in a manner which facilitates thermal transfer between the die and the carrier. The method further includes attaching the thermal carrier having the IC die attached thereto to an upper surface of the base of the IC package. In this manner, one or more IC dies may be attached to a standard plastic IC package without a significant impact on thermal transfer in the device and at a significant cost savings compared to ceramic IC packages.