Abstract: An electronic circuit is disclosed. The electronic circuit includes: a first transistor device integrated in an inner region of a first semiconductor body; a level shifter integrated in a level shifter region of the first semiconductor body, the level shifter region located in an edge region surrounding the inner region of the semiconductor body; and a drive circuit integrated in a drive circuit region in the edge region of the first semiconductor body, the drive circuit configured to receive a first input signal from a first input and drive the first transistor device based on the first input the drive circuit region arranged closer to the inner region than the level shifter region.

Abstract: A method includes forming a layer stack with a plurality of first layers of a first doping type and a plurality of second layers of a second doping type complementary to the first doping type on top of a carrier. Forming the layer stack includes forming a plurality of epitaxial layers on the carrier. Forming each of the plurality of epitaxial layers includes depositing a layer of semiconductor material, forming at least two first implantation regions of one of a first type or a second type at different vertical positions of the respective layer of semiconductor material, and forming at least one second implantation region of a type that is complementary to the type of the first implantation regions, the first implantation regions and the second implantation regions being arranged alternatingly.

Abstract: An electronic circuit is disclosed. The electronic circuit includes: a first transistor device integrated in an inner region of a first semiconductor body; a level shifter integrated in a level shifter region of the first semiconductor body, the level shifter region located in an edge region surrounding the inner region of the semiconductor body; and a drive circuit integrated in a drive circuit region in the edge region of the first semiconductor body, the drive circuit configured to receive a first input signal from a first input and drive the first transistor device based on the first input signal, the drive circuit region arranged closer to the inner region than the level shifter region.

Abstract: An electronic circuit is disclosed. The electronic circuit includes: a first transistor device integrated in an inner region of a first semiconductor body; a level shifter integrated in a level shifter region of the first semiconductor body, the level shifter region located in an edge region surrounding the inner region of the semiconductor body; and a drive circuit integrated in a drive circuit region in the edge region of the first semiconductor body, the drive circuit configured to receive a first input signal from a first input and drive the first transistor device based on the first input signal, the drive circuit region arranged closer to the inner region than the level shifter region.

Abstract: An electronic circuit is disclosed. The electronic circuit includes: a first transistor device integrated in an inner region of a first semiconductor body; and a first drive circuit integrated in a first drive circuit region of the semiconductor body. The first drive circuit is configured to be connected to a level shifter and to drive a second transistor device. The first drive circuit region is located in an edge region surrounding the inner region of the semiconductor body.

Abstract: A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.

Abstract: A method includes forming a layer stack with a plurality of first layers of a first doping type and a plurality of second layers of a second doping type complementary to the first doping type on top of a carrier. Forming the layer stack includes forming a plurality of epitaxial layers on the carrier. Forming each of the plurality of epitaxial layers includes depositing a layer of semiconductor material, forming at least two first implantation regions of one of a first type or a second type at different vertical positions of the respective layer of semiconductor material, and forming at least one second implantation region of a type that is complementary to the type of the first implantation regions, the first implantation regions and the second implantation regions being arranged alternatingly.

Abstract: An electronic circuit is disclosed. The electronic circuit includes: a first transistor device integrated in an inner region of a first semiconductor body; and a first drive circuit integrated in a first drive circuit region of the semiconductor body. The first drive circuit is configured to be connected to a level shifter and to drive a second transistor device. The first drive circuit region is located in an edge region surrounding the inner region of the semiconductor body.

Abstract: A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.