Abstract: The invention relates to the continuous cleaning of objects, in particular of semiconductor elements, using ultrasound, wherein the objects to be cleaned are arranged within a liquid. Furthermore, the present invention relates to an apparatus for carrying out the method according to the invention. A basic idea of the invention is that the surface of an object to be cleaned (2) in a tank (5) filled with liquid passes through at least one oscillation maximum that is emitted by at least one sound source (8a) being present in the tank (5). According to one embodiment, the sound source fields (8) that are positioned within the tank (5) are arranged inclined with respect to the transport direction (4).

Abstract: The invention relates to the continuous cleaning of objects, in particular of semiconductor elements, using ultrasound, wherein the objects to be cleaned are arranged within a liquid. Furthermore, the present invention relates to an apparatus for carrying out the method according to the invention. A basic idea of the invention is that the surface of an object to be cleaned (2) in a tank (5) filled with liquid passes through at least one oscillation maximum that is emitted by at least one sound source (8a) being present in the tank (5). According to one embodiment, the sound source fields (8) that are positioned within the tank (5) are arranged inclined with respect to the transport direction (4).

Abstract: The invention relates in particular to the separation and transportation of a disc shaped substrate (102; 202) such as e.g. a solar wafer. The invention is characterized by the fact that separations take place within a fluid, and that adhesion forces resulting from a thin fluid film develop between a gripper (108; 208) and the substrate to be separated (102; 202) that enable adherence to the gripper (108; 208). Through unloading perpendicular to the feed direction (105; 205) or particularly in parallel to the planar design of the substrates (102; 202), a very gentle and efficient separation of disc shaped substrates (102; 202) is possible with a short cycle time.