Abstract: Some embodiments of the present invention provided an impedance-transforming arrangement comprising a plurality of microwave power transistors 41, and at least one intermediate impedance-transforming or matching device 30. The matching device comprises a plurality of elongate microwave transmission lines 31 provided in or on at least one dielectric substrate 32, extending across or through the dielectric substrate. The microwave transmission lines are coupled at one end to the gate pads 47 of the transistor and at the input ends to a signal input terminal for the transmission line. The transmission lines are substantially directly coupled to one another by means of resistive elements 35 providing a current flow path between the two transmission lines in order to reduce any residual tendency to instability caused by manufacturing variations or misalignment in the assembly process.

Abstract: A highly parallel data storage chip device providing a plurality of parallel data tracks allocated into separate physical groups upon a data storage medium. A controller establishes logical groups of data tracks located in different physical groups. A servo track provides tracking information for a plurality of read/write devices that move relative to the length of each data track, thereby permitting parallel data transfer between the read/write devices and the distributed data tracks of the logical group.

Abstract: A gutter cleaning device includes an elongate pole including a conduit extending therethrough for communication between a nozzle at a top end of the pole and a source of high pressure compressed gas at a bottom end of the pole. A trigger valve mechanism at the source controls dispensing of the gas through the nozzle. Use of a portable, replaceable canister of high pressure compressed air results in a light weight device which does not require any additional cords or hoses to be carried about the perimeter of a building having gutters to be cleared.

Abstract: A data storage device includes a first read mechanism, a second read mechanism, and a data storage medium movable with respect to the first read mechanism and the second read mechanism. A first reference patch containing reference bits is positioned near a first corner of the data storage medium. The first read mechanism is configured to read the reference bits of the first reference patch and the second read mechanism is configured to read the reference bits of a second reference patch. The storage device also includes a controller configured to determine whether the first read mechanism and the data storage medium are offset with respect to each other based upon the reference bits read by the first read mechanism and the reference bits read by the second mechanism.

Abstract: A parallel data storage device includes a data storage medium having a first cluster and a second cluster. The first cluster includes a first patch and the second cluster includes a second patch. The parallel data storage device also includes a first reader for reading the first patch of the first cluster and a second reader for reading the second patch of the second cluster. A first multiplexer is used for addressing the first cluster while a second multiplexer is used for addressing the second cluster. The first and second readers are arranged in a single column such that the first reader is electrically connected to the first multiplexer and the second reader is electrically connected to the second multiplexer.

Abstract: A nano-scale tip for use on a probe includes a first width and a second width. The first width of the tip is greater than the second width and the varying sized widths form a substantially elliptical shape.

Abstract: A storage device includes a storage medium and a probe to form perturbations in the storage medium. The storage device further includes a circuit to cause heating of the probe to perform an access operation, the circuit to compensate for variations in a temperature of the probe in performing the access operation.

Abstract: A method of storing data in a storage device having a probe to form perturbations in a storage medium of the storage device includes receiving input write data bits and encoding the input write data bits to form coded write data bits. Perturbations are formed in the storage medium by contacting a probe to the storage medium, the perturbations corresponding to the coded write data bits, wherein the coded write data bits provide a generally uniform distribution of the perturbations on the storage medium.

Abstract: A method for determining memory element values may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory element, and measuring a second current provided to the column of interest.

Abstract: Apparatus and methods are provided for detecting the presence of data in a recording media in a plurality of data locations. A mechanical detector is used to sense a data location and generate an initial signal. A differentiator is provided to differentiate the initial signal to generate a derivative signal. A comparator is used for comparing the derivative signal to a first reference signal to determine a zero crossing point representative of a change in direction of the detection device. At least one qualified signal is generated from the derivative signal. Timing circuitry is provided for comparing the zero crossing signal to the at least one qualified signal to determine the presence of data at a data location.

Abstract: A storage device includes a probe and a storage medium having a plurality of storage cells. The probe is able to form a first structure and a second structure in the storage medium, where a first storage cell containing a transition between the first structure and a second structure contains a data bit having a first state, and where a second storage cell not including a transition between the first structure and the second structure contains a data bit having a second state.

Abstract: A highly parallel data storage chip device providing a plurality of parallel data tracks allocated into separate physical groups upon a data storage medium. A controller establishes logical groups of data tracks located in different physical groups. A servo track provides tracking information for a plurality of read/write devices that move relative to the length of each data track, thereby permitting parallel data transfer between the read/write devices and the distributed data tracks of the logical group.

Abstract: A storage device includes a probe and a storage medium, where the probe is adapted to form perturbations in the storage medium. A read circuit detects a storage state, with the read circuit to receive a first signal representing interaction between the probe and the storage medium. The read circuit derives a second signal based on the first signal, the second signal being a second derivative of the first signal. The read circuit is adapted to detect the storage state based on the second signal.

Abstract: A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever. A device which is associated with one of the cantilever and the medium is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever. A heater is disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data. A circuit electrically interconnects both of the device and the heater.

Abstract: A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever; a device associated with one of the cantilever and the medium which is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever; a heater disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data; and a circuit which electrically interconnects both of the device and the heater.

Abstract: A system and method of calibrating a read circuit in a magnetic memory is disclosed. In one embodiment, the method includes measuring a calibration value. A large error calibration is performed if the calibration value is within a maximum range. A small error calibration is performed if the calibration value is within a minimum range. The method may include performing a first read operation on the magnetic memory, and performing a second read operation on the magnetic memory.

Abstract: A method for determining the memory element values is disclosed. In some embodiments the method may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory elements, and measuring a second current provided to the column of interest.

Abstract: A logical data block in a MRAM is disclosed. The logical data block comprises magnetic memory cells formed at intersections of hard-axis generating conductors and an easy-axis generating conductor. The logical data block may further be configured in size by a preselected, block-based error correction code. A magnetic memory module and computer system including a MRAM having a logical data block according to embodiments of the present invention are also disclosed. Additionally, a method embodiment of reducing half-select write errors within a MRAM is disclosed.

Abstract: A method for performing a read operation from a memory cell in a memory cell string is provided. The method includes applying a constant current across the memory cell string, measuring a first voltage across the memory cell string, writing the memory cell to a first state, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.

Abstract: A method for performing a read operation from a magnetic random access memory (MRAM) cell in a memory cell string is provided. The method includes applying a constant current through the memory cell string, measuring a first voltage across the memory cell string, applying a write sense current across the MRAM cell, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.