Patents by Inventor Richard Hsiao

Richard Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8427791
    Abstract: According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: April 23, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Zheng Gao, Liubo Hong, Richard Hsiao, Sangmun Oh, Chando Park, Chang-Man Park
  • Publication number: 20120164757
    Abstract: The present invention provides a method for manufacturing a TMR sensor that reduces damage to a sensor stack during intermediate stages of the manufacturing process. In an embodiment of the invention, after formation of a sensor stack, a protective layer is deposited on the sensor stack that provides protection from materials that may be used in subsequent steps of the manufacturing process. The protective layer is subsequently converted to an insulating layer and the thickness of the insulating layer is extended to an appropriate thickness. In converting the protective layer to an insulating layer, the sensor stack is not directly exposed to materials that may damage it. For example, in an embodiment of the invention, Mg is used as the protective layer that is subsequently converted to MgO with the introduction of oxygen. Although direct contact of oxygen with the sensor stack may cause damage to the sensor stack, direct contact is avoided by the present invention.
    Type: Application
    Filed: December 27, 2010
    Publication date: June 28, 2012
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Zheng Gao, Liubo Hong, Richard Hsiao, Kochan Ju, Stefan Maat
  • Publication number: 20120127603
    Abstract: According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.
    Type: Application
    Filed: November 23, 2010
    Publication date: May 24, 2012
    Applicant: Hitachi Global Storage Technologies Netherlands B. V.
    Inventors: Zheng Gao, Liubo Hong, Richard Hsiao, Sangmun Oh, Chando Park, Chang-Man Park
  • Patent number: 7881011
    Abstract: A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
    Type: Grant
    Filed: August 9, 2007
    Date of Patent: February 1, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, Wipul Pemsiri Jayasekara, Jeffrey S. Lille
  • Patent number: 7703194
    Abstract: A method for creating a write element of a magnetic head according to one embodiment includes forming a first pole pedestal; forming a write gap layer above the first pole pedestal; forming a second pole pedestal above the write gap layer; and forming at least one of: a cap layer of CoFeON between the first pole pedestal and the write gap, and a seed layer of CoFeON between the write gap layer and the second pole pedestal. Note that other layers may be interspersed between those set forth here.
    Type: Grant
    Filed: March 19, 2007
    Date of Patent: April 27, 2010
    Assignee: International Business Machines Corporation
    Inventors: Brian E. Brusca, Joel S. Forrest, Richard Hsiao, James D. Jarratt, Brian R. York
  • Patent number: 7627942
    Abstract: A method for fabricating a magnetic write head with a coil with a high aspect ratio using a Chemical Vapor Deposition process such as Atomic Layer Deposition (ALD), High Speed ALD, Plasma Enhanced ALD (PEALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to form encapsulating films over the coils without voids is disclosed. Materials which can be used for encapsulation include Al2O3, SiO2, AlN, Ta2O5, HfO2, ZrO2, and YtO3. The use of an ultra-conformal deposition process allows the pitch of the coils to be smaller than it is possible in the prior art. The method also allows materials with a smaller coefficient of thermal expansion than hardbake photoresist to be used with resulting improvements in thermal protrusion characteristics.
    Type: Grant
    Filed: March 25, 2005
    Date of Patent: December 8, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, Wipul Pemsiri Jayasekara, Howard Gordon Zolla
  • Patent number: 7397634
    Abstract: A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: July 8, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Daniel Wayne Bedell, Richard Hsiao, James D. Jarratt, Patrick Rush Webb, Sue Siyang Zhang
  • Patent number: 7380332
    Abstract: A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure.
    Type: Grant
    Filed: January 20, 2005
    Date of Patent: June 3, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Daniel Wayne Bedell, Richard Hsiao, James D. Jarratt, Patrick Rush Webb, Sue Siyang Zhang
  • Patent number: 7362543
    Abstract: The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.
    Type: Grant
    Filed: April 18, 2005
    Date of Patent: April 22, 2008
    Assignee: International Business Machines Corporation
    Inventors: Richard Hsiao, Quang Le, Paul P. Nguyen, Son Van Nguyen, Mustafa Pinarbasi, Patrick R. Webb, Howard G. Zolla
  • Publication number: 20080026254
    Abstract: A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
    Type: Application
    Filed: August 9, 2007
    Publication date: January 31, 2008
    Inventors: Richard Hsiao, Wipul Jayasekara, Jeffrey Lille
  • Patent number: 7322097
    Abstract: The induction coil of the magnetic head of the present invention is fabricated in a patterned electrical insulation material, preferably utilizing reactive ion etch (RIE) techniques. The electrical insulation material is particularly patterned such that it is formed away from the ABS surface and in the location of the induction coil. A fill layer is deposited around the patterned electrical insulation material layer, such that the fill layer is disposed at the ABS surface. In a preferred embodiment, the patterned electrical insulation material is initially fabricated from hard baked photoresist and subsequent to the deposition of the fill layer the hard baked photoresist material is removed and replaced by SiO2. The SiO2 is thereby located away from the ABS surface and the induction coil is subsequently fabricated within the SiO2 material.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: January 29, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Richard Hsiao, Edward Hin Pong Lee
  • Patent number: 7313858
    Abstract: A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: January 1, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, Prakash Kasiraj, Quang Le, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Patrick Rush Webb
  • Patent number: 7304821
    Abstract: A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.
    Type: Grant
    Filed: November 19, 2003
    Date of Patent: December 4, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, Prakash Kasiraj, Quang Le, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Patrick Rush Webb
  • Patent number: 7281316
    Abstract: A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: October 16, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, Wipul Pemsiri Jayasekara, Jeffrey S. Lille
  • Patent number: 7251103
    Abstract: A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: July 31, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, Wipul Pemsiri Jayasekara, Jeffrey S. Lille
  • Publication number: 20070169337
    Abstract: A method for creating a write element of a magnetic head according to one embodiment includes forming a first pole pedestal; forming a write gap layer above the first pole pedestal; forming a second pole pedestal above the write gap layer; and forming at least one of: a cap layer of CoFeON between the first pole pedestal and the write gap, and a seed layer of CoFeON between the write gap layer and the second pole pedestal. Note that other layers may be interspersed between those set forth here.
    Type: Application
    Filed: March 19, 2007
    Publication date: July 26, 2007
    Inventors: Brian Brusca, Joel Forrest, Richard Hsiao, James Jarratt, Brian York
  • Patent number: 7233458
    Abstract: A write element includes a first pole pedestal and a second pole pedestal opposing the first pole pedestal and defining a write gap between the first and second pole pedestals. A first layer of CoFeON is film positioned between the first pole pedestal and the write gap. A second layer of CoFeON film is positioned between the second pole pedestal and the write gap.
    Type: Grant
    Filed: September 11, 2002
    Date of Patent: June 19, 2007
    Assignee: International Business Machines Corporation
    Inventors: Brian E. Brusca, Joel S. Forrest, Richard Hsiao, James D. Jarratt, Brian R. York
  • Patent number: 7199972
    Abstract: The magnetic head includes a P2 pole tip in which the P2 pole tip material is electroplated upon a sidewall of the P2 pole tip photolithographic trench. To accomplish this, a block of material is deposited upon a write gap layer, such that a generally straight, vertical sidewall of the block of material is disposed at the P2 pole tip location. Thereafter, an electroplating seed layer is deposited upon the sidewall. A P2 pole tip trench is photolithographically fabricated such that the sidewall (with its deposited seed layer) is exposed within the P2 pole tip trench. Thereafter, the P2 pole tip is formed by electroplating pole tip material upon the seed layer and outward from the sidewall within the trench, The width of the P2 pole tip is thus determined by the quantity of pole tip material that is deposited upon the sidewall.
    Type: Grant
    Filed: August 31, 2001
    Date of Patent: April 3, 2007
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Thomas Edward Dinan, Richard Hsiao
  • Patent number: 7139153
    Abstract: A method for forming a magnetic structure, such as a pole tip, includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
    Type: Grant
    Filed: February 23, 2004
    Date of Patent: November 21, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Hsiao, Wipul Pemsiri Jayaekara, Jeffrey S. Lille
  • Patent number: 7127800
    Abstract: The magnetic head includes a P2 pole tip in which the P2 pole tip material is electroplated upon a sidewall of the P2 pole tip photolithographic trench. To accomplish this, a block of material is deposited upon a write gap layer, such that a generally straight, vertical sidewall of the block of material is disposed at the P2 pole tip location. Thereafter, an electroplating seed layer is deposited upon the sidewall. A P2 pole tip trench is photolithographically fabricated such that the sidewall (with its deposited seed layer) is exposed within the P2 pole tip trench. Thereafter, the P2 pole tip is formed by electroplating pole tip material upon the seed layer and outward from the sidewall within the trench. The width of the P2 pole tip is thus determined by the quantity of pole tip material that is deposited upon the sidewall.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: October 31, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Thomas Edward Dinan, Richard Hsiao