Abstract: In accordance with various aspects of the disclosure, a method and apparatus for receiving multiple channels from a broadcast source and interfacing to multiple demodulators within a common silicon implementation is disclosed. A receiver apparatus is disclosed that may aggregate multiple channels output by multiple tuners into at least one composite signal. The at least one composite signal may be passed to a single ADC. The channels may then be extracted from the at least one composite signal in the digital domain prior to demodulation in separate demodulators.

Abstract: A self-configurable amplifier and method of amplification, including an RF signal level detector having an input connected to an RF signal, and an output configured to produce a control signal responsive to a power level of the RF signal. The control signal is supplied to a parametric adjustment circuit that includes an input connected to the control signal, and an output configured to provide a negative feedback responsive to the control signal. The negative feedback is supplied to an RF amplifier that includes an input forming an input of the self-configurable amplifier, an output forming an output of the self-configurable amplifier, and a control port connected to the output of the parametric adjustment circuit, such that one or more parameters of the RF amplifier is responsive to the negative feedback.

Abstract: A self-configurable amplifier and method of amplification, including an RF signal level detector having an input connected to an RF signal, and an output configured to produce a control signal responsive to a power level of the RF signal. The control signal is supplied to a parametric adjustment circuit that includes an input connected to the control signal, and an output configured to provide a negative feedback responsive to the control signal. The negative feedback is supplied to an RF amplifier that includes an input forming an input of the self-configurable amplifier, an output forming an output of the self-configurable amplifier, and a control port connected to the output of the parametric adjustment circuit, such that one or more parameters of the RF amplifier is responsive to the negative feedback.

Abstract: A wireless device includes an impedance transforming network that couples an antenna to a Low Noise Amplifier (LNA) and includes at least one digitally controllable variable capacitor that may be adjusted to maximize an impedance transformation ratio on a desired channel. A tuned response centered on the desired channel provides attenuation to undesired channels.

Abstract: An integrated circuit has a guard ring for shielding a first area 14 (eg. high voltage area) from a second area 15 (eg.low voltage). The guard ring comprises a conductive guard ring 6, (eg. metal), which is partially exposed through a passivation layer 13 in the integrated circuit 1. A semiconductor guard ring 8, (eg. silicon), is isolated from the first and second areas of semiconductor by at least two trench rings 16, one located on each side of the semiconductor guard ring 8. A plurality of conductive elements (comprising a metal connection plate 18 and via 19) connect the conductive guard ring 6 and the semiconductor guard ring 8 at spaced apart intervals. The conductive guard ring 6, semiconductor guard ring 8 and conductive elements are all connected to a ground source. If high energy particles move from the first area towards the second area, they are attracted to the exposed metal, and their charge is conducted to ground.

Abstract: An integrated circuit has a guard ring for shielding a first area 14 (eg. high voltage area) from a second area 15 (eg. low voltage). The guard ring comprises a conductive guard ring 6, (eg. metal), which is partially exposed through a passivation layer 13 in the integrated circuit 1. A semiconductor guard ring 8, (eg. silicon), is isolated from the first and second areas of semiconductor by at least two trench rings 16, one located on each side of the semiconductor guard ring 8. A plurality of conductive elements (comprising a metal connection plate 18 and via 19) connect the conductive guard ring 6 and the semiconductor guard ring 8 at spaced apart intervals. The conductive guard ring 6, semiconductor guard ring 8 and conductive elements are all connected to a ground source. If high energy particles move from the first area towards the second area, they are attracted to the exposed metal, and their charge is conducted to ground.

Abstract: An integrated circuit has a guard ring for shielding a first area 14 (eg. high voltage area) from a second area 15 (eg. low voltage). The guard ring comprises a conductive guard ring 6, (eg. metal), which is partially exposed through a passivation layer 13 in the integrated circuit 1. A semiconductor guard ring 8, (eg. silicon), is isolated from the first and second areas of semiconductor by at least two trench rings 16, one located on each side of the semiconductor guard ring 8. A plurality of conductive elements (comprising a metal connection plate 18 and via 19) connect the conductive guard ring 6 and the semiconductor guard ring 8 at spaced apart intervals. The conductive guard ring 6, semiconductor guard ring 8 and conductive elements are all connected to a ground source. If high energy particles move from the first area towards the second area, they are attracted to the exposed metal, and their charge is conducted to ground.