Abstract: A novel CMP slurry composition used for polishing metals, the composition comprising: a dispersion solution comprising an abrasive. The slurry composition has a large particle count of about 25 to about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Abstract: A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.

Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Abstract: A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.

Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Abstract: The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Abstract: A method for quality and reliability assurance testing a lot of fabricated ICs comprising the steps of testing the differential Iddq of a sample of ICs at a plurality of different voltages, burning-in a sample of ICs, and then testing the functionality of the sample of ICs. The method of the present invention enables the reliability of an entire lot of ICs to be tested by determining an effective screening voltage for differential Iddq testing of the ICs, thereby eliminating the need both to burn-in and conduct post burn-in testing of all future lots of the ICs. The method of the present invention also enables fabrication facilities and workers to be engaged in other tasks rather than testing of ICs.

Abstract: This invention relates to an improved hydrogenation process wherein aromatic amines are hydrogenated to their ring hydrogenated counterparts using an improved rhodium catalyst and to the catalyst. The aromatic amines are represented by the formulas: ##STR1## wherein R is hydrogen or C.sub.1-6 aliphatic, R.sub.1 and R.sub.2 are hydrogen or C.sub.1-6 aliphatic, A is C.sub.1-4 alkylene, NH, or ##STR2## n is 0-2, x is 1-3 and y is 1 to 2 except the sum of the y groups in Formula I excluding A may be 1.The rhodium catalyst is supported on titania bonded to silica or zirconia or bonded with silica, zirconia or titania from a sol or zirconia bonded with silica or alumina. The resulting catalyst has greater activity and attrition resistance. Zirconia bonded with silica or alumina also results in a catalyst with increased attrition resistance.

Abstract: Maximum Aluminum X-type zeolite is prepared in the form of essentially binderless aggregates. In the optimal case, the composition possesses the maximum theoretical zeolite cation content in a wide-pored zeolite as a solid, massive body.