Abstract: An MOCVD deposition technique wherein the pressure of reagent vapors within the reaction vessel (1) is maintained at a reduced pressure in the range 10.sup.-2 to .about.10 millibars and contained mounted substrates (15) are heated non-inductively e.g. by an electric resistance circumferential furnace (5). In the above pressure range, high diffusivity of the reagent vapors ensures exposure of the substrates (15) to a uniform reagent mixture. A large number of substrates (15) may be processed simultaneously. As heating is non-inductive, an inert mounting (17) can be utilized avoiding the introduction of contaminants (e.g. carbon) into the deposited film.

Abstract: There is provided a method of producing inorganic thin films by metal inorganic chemical vapor deposition. The method comprises forming a vapor stream comprising a vapor mixture of an organometallic compound and a heterocyclic organic compound incorporating a group V or group VI element, and thermally decomposing the mixture on a heated substrate to form an inorganic layer. The heterocyclic compound may be an aliphatic or aromatic ring compound. The mixture may include vapors appropriate for deposition of ternary or higher order compounds, and/or for introducing dopants.