Abstract: A method includes retrieving a group test parameter determined based on test results associated with a plurality of integrated circuit devices. A particular integrated circuit device is tested using a test program and the group test parameter.

Abstract: The present invention provides a method and apparatus for modifying process selectivities based on process state information. The method includes accessing process state information associated with at least one material removal process, determining at least one selectivity based on the process state information, and modifying at least one process parameter of said material removal process based on said at least one determined selectivity.

Abstract: The present invention provides a method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities. The method includes accessing measurement information provided by a first measurement device and modifying a sensitivity of a second measurement device based on the measurement information provided by the first measurement device.

Abstract: The present invention provides a method and apparatus for dynamic adjustment of a sampling plan. The method includes accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool. The method also includes determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool.

Abstract: The present invention is generally directed to plasma state monitoring to control etching processes and across-wafer uniformity, and a system for performing same. In one illustrative embodiment, the method comprises generating a plasma within an etching tool, monitoring at least one characteristic of the generated plasma, and controlling at least one parameter of a plasma etching process performed in the tool based upon the monitored at least one characteristic of the plasma. In another illustrative embodiment, the method comprises generating a plasma within an etch tool, performing a plasma etching process within the etch tool, determining at least one characteristic of the plasma, and controlling at least one parameter of the etching process based upon a comparison of the determined at least one characteristic of the plasma and a target value for the determined at least one characteristic of the plasma.

Abstract: A system includes a process tool for processing a workpiece, a process controller, and a fault monitor. The process controller is configured to determine a control action for updating an operating recipe of the process tool. The fault monitor is configured to determine at least one fault detection threshold based on the control action. A method includes determining a control action for updating an operating recipe of a process tool and determining at least one fault detection threshold based on the control action.

Abstract: The present invention is generally directed to various methods and systems for fault detection control of multiple tools based upon external data. In one illustrative embodiment, the method includes monitoring each of a plurality of tools to determine if a fault condition occurs in any of the tools, each of the tools being comprised of at least one integrated metrology device, monitoring external data regarding at least one parameter that may impact an operation performed in each of the tools, and determining if an indicated fault condition in at least one of the tools is a valid fault condition or a systemic fault condition associated with a change in a value of the at least one parameter.

Abstract: The present invention provides a method and apparatus for controlling processing tools and related control units. The method includes accessing information indicative of at least one excursion of at least one processing tool detected by a first control unit associated with the at least one processing tool. The method also includes determining at least one action to be taken by at least one second control unit associated with the at least one processing tool based on the information indicative of said at least one excursion.

Abstract: The system includes a plurality of process modules and an independent module controller for each of the plurality of process modules that is adapted to control the process tools within each of the process modules. Each of the independent module controllers performs at least run-to-run control of the processing tools, yield management analysis, scheduling of materials provided to and sent from the process module, and movement of wafers within the process module. One method of the present invention involves providing a plurality of process modules, each of which has an independent module controller that is adapted to perform at least run-to-run control of the processing tools within the process module, yield management analysis, scheduling of materials, and movement of wafers within the process module. The independent module controller for each of the process modules controls the process tools within its respective process module that are employed in forming a portion of the integrated circuit device.

Abstract: A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings; illuminating at least a portion of the grid with a light source; measuring light reflected from the illuminated portion of the grid to generate a reflection profile; and determining a dimension of the grid based on the reflection profile. A metrology tool is adapted to receive a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grid.

Abstract: The present invention provides a method, an apparatus, and an automated semiconductor fabrication facility for determining control information based on global goals of a semiconductor manufacturing facility. The method includes accessing information indicative of at least one global goal of a semiconductor manufacturing facility, determining control information based on the at least one global goal, and providing a portion of the control information to each of a plurality of control units. Each of the plurality of control units is configured to control a corresponding manufacturing activity based on the provided portion of the control information.

Abstract: A method and an apparatus for implementing a multi-variate process control system. A workpiece is processed using a primary process control function during a first time period. A secondary process control function is performed during at least a portion of the first time period for processing of the workpiece. The secondary process control function is capable of modifying at least one secondary control parameter.

Abstract: The present invention is generally directed to various methods and systems for calibrating degradable components using process state data. In one illustrative embodiment, the method includes providing a tool comprised of at least one process chamber, providing at least one process state sensor that is adapted to obtain process state data regarding at least one characteristic of a process environment established in the chamber in performance of a process operation, operatively coupling at least one of a new or repaired degradable component to the tool, and calibrating the new or repaired degradable component based upon the process state data. In further embodiments, the method comprises processing a plurality of additional workpieces in the tool after the new or repaired degradable components have been calibrated using process state data in accordance with one aspect of the present invention.

Abstract: A method includes receiving a current residual vector. The current residual vector is compared to a plurality of historical residual vectors. Each historical residual vector has an associated fault classification code. At least one of the historical residual vectors is selected responsive to determining that the current residual vector matches at least one of the historical residual vectors. A fault condition is classified based on the fault classification code associated with the selected historical residual vector.

Abstract: A method and an apparatus are provided for conflict resolution among a plurality of controllers. The method includes receiving a first control instruction from a first process controller to process a workpiece, receiving a second control instruction from a second process controller to process the workpiece and adjusting at least one of the first control instruction and the second control instruction to process the workpiece to achieve a desired process goal.

Abstract: A method and apparatus is provided for fault detection spanning multiple processes. The method comprises receiving operational data associated with a first process, receiving operational data associated with a second process, which is downstream to the first process and performing fault detection analysis based on the operational data associated with the first process and second process using a common fault detection unit.

Abstract: A method and an apparatus are provided for verifying a fault detection result in a system. The apparatus includes an interface and a control unit. The interface is adapted to receive data associated with a process operation and adapted to receive information provided by a process controller associated with the process operation. The control unit, which is communicatively coupled to the interface, is adapted to perform a fault detection analysis based on the data associated with the process operation and verify a result of the fault detection analysis based on the information provided by the process controller.

Abstract: The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model.

Abstract: A method and apparatus is provided for a process control based on an estimated process result. The method comprises processing a workpiece using a processing tool, receiving trace data associated with the processing of the workpiece from the processing tool and estimating at least one process result of the workpiece based on at least a portion of the received trace data. The method further comprises adjusting processing of a next workpiece based on the estimated at least one process result.

Abstract: A method for modifying design constraints based on observed performance includes measuring a characteristic of a plurality of devices manufactured in a process flow. A design constraint associated with the characteristic is defined. A performance metric relating the performance of the devices as a function of the measured characteristic and the design constraint is generated. The design constraint is modified based on the performance metric. A manufacturing system includes a metrology tool and a design rule monitor. The metrology tool is configured to measure a characteristic of a plurality of devices manufactured in a process flow. The design rule monitor is configured to receive a design constraint associated with the characteristic, generate a performance metric relating the performance of the devices as a function of the measured characteristic and the design constraint, and modify the design constraint based on the performance metric.