Abstract: Techniques and system implementations for fiber optic transmission systems for suppressing fiber induced distortions and modulation-induced distortions as well as increasing the link power and RF gain.

Abstract: Techniques and system implementations for fiber optic transmission systems for suppressing fiber induced distortions and modulation-induced distortions as well as increasing the link power and RF gain.

Abstract: Techniques and systems for reducing nonlinear distortions in an output optical beam from an optical transmitter by using both electrical pre-distortion compensation and optical compensation.

Abstract: Techniques and systems for reducing nonlinear distortions in an output optical beam from an optical transmitter by using both electrical pre-distortion compensation and optical compensation.

Abstract: A method for tuning fiber optic coupler and wavelength division multiplexer devices comprises the steps of fusing optical fibers having a refractive index responsive to ultraviolet radiation to form a coupling region having a coupling ratio dependent upon the refractive index, and subjecting the coupling region to ultraviolet radiation to adjust the coupling ratio to a predetermined value at a given operating wavelength.

Abstract: An etching process allows a selective single-step patterning of silicon devices in a noncorrosive environment. The etching of silicon relies on a maskless laser-assisted technique in a gaseous halocarbon ambient, such as the gaseous chlorofluorocarbons, dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on silicon occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold (approximately 0.75 J/cm.sup.2). When incident fluence exceeds the ablation threshold (approximately 2.2 J/cm.sup.2) an undesirable, increased surface roughness is observed. Etch rates as large as approximately 15 angstroms per pulse are attained within predetermined processing windows. This provides a means for thin membrane formation in silicon, rapid etches and processing of packaged devices or partially fabricated dies.

Abstract: An etching process allows a selective single-step patterning of III-V or II-VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.

Abstract: An etching process allows a selective single-step patterning of silicon devices in a noncorrosive environment. The etching of silicon relies on a maskless laser-assisted technique in a gaseous halocarbon ambient, such as the gaseous chlorofluorocarbons, dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on silicon occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold (approximately 0.75 J/cm.sup.2). When incident fluence exceeds the ablation threshold (approximately 2.2 J/cm.sup.2) an undesirable, increased surface roughness is observed. Etch rates as large as approximately 15 angstroms per pulse are attained within predetermined processing windows. This provides a means for thin membrane formation in silicon, rapid etches and processing of packaged devices or partially fabricated dies.

Abstract: An etching process allows a selective single-step patterning of III-V or VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.

Abstract: STATEMENT OF GOVERNMENT INTERESTThe invention described herein may be manufactured and used by or for the Government of the United States of America for governmental purposes without the payment of any royalties thereon or therefor.

Abstract: The invention provides a method for fabricating a polarization independent narrow channel wavelength division multiplexing fiber optic coupler, comprising the steps of: holding two optical fibers in an abutting longitudinal relation along a predetermined length of the fibers; injecting light energy into one of the fibers; fusing the optical fibers together along the predetermined length to form a fused length of a fiber optic coupler; elongating the fused length of the fusing optical fibers; measuring the light energy output from the ends of the first and second fibers; ceasing the fusing and elongating when the measured light energy output from the ends of the first and second fibers indicates that a predetermined number, N.sub.S, of one-half power transfer cycles have occurred in the coupler, where the N.sub.S th one-half power transfer cycle occurs within a K.pi. phase region of a polarization envelope associated with the coupler, where K is a positive integer.