Abstract: A process for forming a textured back reflector for a photovoltaic device is provided. The process includes providing a moving substrate, positioning the substrate within a deposition chamber, and sputtering a metal or a metal alloy target positioned within the deposition chamber to produce sputtered material. The process further includes introducing a reacting gas mixed with argon into the deposition chamber. The reacting gas and the sputtered metal or metal alloy material form an alloy layer. The alloy layer is formed on the substrate and provides a textured surface on the substrate.

Abstract: A method of fabricating electrically isolated photovoltaic modules arrayed on a substrate by forming overlying front contact strips, photovoltaic strips, and back contact strips on a flat transparent substrate, laser scribing between modules to electrically isolate adjacent modules for the simultaneous testing and electrical curing of the modules on a single substrate, and plasma etching the inter-module grooves formed by the laser isolation step to improve the percentage of modules on a single substrate that pass minimum performance criteria.Also disclosed is an array of electrically isolated, thin-film semiconductor devices fabricated on a single substrate, wherein adjacent semiconductor devices are separated by laser-scribed grooves extending through the devices to the substrate and the walls of the grooves have been etched by plasma etching.

Abstract: An improved oscillator circuit, adapted especially for use in generating multi-frequency wave patterns occurring within the ultrasonic range, incorporates a transistor base drive network in which an alternate discharge path is used for coupling capacitors already known in circuits of this type. Power losses occurring in the transistors are lessened by employing transistors having reverse base-emitter breakdown voltage ratings that are higher than those conventionally employed. Use of the substituted transistors becomes possible by substituting the mentioned alternate discharge path, to compensate for the lower average discharge current that is known to pass through the base-emitter circuits of the transistors by reason of their higher reverse base-emitter breakdown voltages. The improved circuit in this way reduces power loss and its consequent temperature rise in the transistors and in their base and emitter resistors to increase output power to the accompanying reduction of transistor losses.