Abstract: A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask.

Abstract: A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask.

Abstract: An improved damascene method of forming a write coil of a magnetic head. The method includes the steps of forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; after removing the etched hard mask layer, electroplating a material within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the electroplated material. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.

Abstract: To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.