Patents by Inventor Richard K. Mains

Richard K. Mains has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9287819
    Abstract: A system and method for determining rotor shaft position of high voltage permanent magnet AC synchronous machines using auxiliary windings utilizes a permanent magnet AC synchronous motor including a stator having a main set of coils and an auxiliary set of coils. A drive controller including a digital signal processor in communication with the motor utilizes a current and voltage measurements from the main and auxiliary coils to determine the position of the rotor shaft in a sensorless mode.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: March 15, 2016
    Assignee: SKY WINDPOWER CORPORATION
    Inventors: Patrick J. McCleer, Richard K. Mains
  • Publication number: 20140265973
    Abstract: A system and method for determining rotor shaft position of high voltage permanent magnet AC synchronous machines using auxiliary windings utilizes a permanent magnet AC synchronous motor including a stator having a main set of coils and an auxiliary set of coils. A drive controller including a digital signal processor in communication with the motor utilizes a current and voltage measurements from the main and auxiliary coils to determine the position of the rotor shaft in a sensorless mode.
    Type: Application
    Filed: March 18, 2014
    Publication date: September 18, 2014
    Applicant: SKY WINDPOWER CORPORATION
    Inventors: Patrick J. McCleer, Richard K. Mains
  • Patent number: 4912539
    Abstract: A semiconductor structure, in the form of a resonant-tunneling transistor employs a quantum well region which is at a lower potential than the conduction band edge in the contacts, as a result of the lower band gap of InGaAs relative to GaAs. Thus, the first energy level in the well lies below the conduction band edge in the contact, and therefore base electrons are retained in bond states. In addition, the base-collector barrier is extended by a gradient of Al.sub.x Ga.sub.1-x As. In the specific embodiment, the barrier is extended by some 300 .ANG., and the proportion of Al decreases away from the barrier until only n.sup.+ GaAs is present. In this manner, tunneling current between the base and collector is significantly reduced, without adversely affecting emitter-collector tunneling current. The structure described herein can be used in a variety of materials, and transistor structures, such as the induced base transistor, in addition to the resonant-tunneling transistor.
    Type: Grant
    Filed: August 5, 1988
    Date of Patent: March 27, 1990
    Assignee: The University of Michigan
    Inventors: George I. Haddad, Richard K. Mains