Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of three operating layers 12, 13, 14. An addressing layer 12 is fabricated on the substrate. A hinge layer 13 is spaced above the addressing layer 12 by an air gap. A mirror layer 14 is spaced over the hinge layer 13 by a second air gap. The hinge layer 13 has a hinge 13a under and attached to the mirror 14a, the hinge 13a permitting the mirror 14a to tilt. The hinge layer 13 further has spring tips 13c under the mirror 14a, which are attached to the addressing layer 12. These spring tips 13c provide a stationary landing surface for the mirror 14a.

Abstract: According to one embodiment of the present invention a method of reflecting light is disclosed including providing an element having a surface having an edge on which the element is capable of rolling and selectively reflecting light by rolling the surface such that a reflective element associated with the surface selectively reflects light to a desired location.

Abstract: According to one embodiment of the present invention a digital micro-mirror device is taught that includes a pixel occupying an area of the device and a hinge coupled to the pixel and positioned such that at least a portion of the hinge falls outside the area of the pixel.

Abstract: A method and system in which a semiconductor wafer having a plurality of dies is inspected through a visual inspection and/or an electrical test. If certain of the dies on the wafer pass the inspection, then windows are mounted or affixed above those certain dies while they are still a part of the wafer.

Abstract: According to one embodiment of the invention, a method for displaying an image includes sensing an acceleration of a projector in at least one direction and, based on the sensed acceleration, determining a motion of the projector in at least one direction. The method also includes adjusting an image associated with the projector based on the determined relative motion.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of three operating layers 12, 13, 14. An addressing layer 12 is fabricated on the substrate. A hinge layer 13 is spaced above the addressing layer 12 by an air gap. A mirror layer 14 is spaced over the hinge layer 13 by a second air gap. The hinge layer 13 has a hinge 13a under and attached to the mirror 14a, the hinge 13a permitting the mirror 14a to tilt. The hinge layer 13 further has spring tips 13c under the mirror 14a, which are attached to the addressing layer 12. These spring tips 13c provide a stationary landing surface for the mirror 14a.

Abstract: In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.

Abstract: A capacitively coupled microelectromechanical device and method of operation. The micromechanical device comprises: a semiconductor substrate; a member operable to deflect about a torsion axis to either of at least two states; and a switch driven for selectively connecting the member to a voltage signal. When a logic high signal is stored on the memory capacitor 308, the mirror transistor 310 is turned on, grounding the mirror structure 312. When a logic low signal is stored on the memory capacitor 308, the mirror transistor 310 is turned off, allowing the mirror to float electrically. Mirrors that are tied to a voltage potential, which typically are grounded, are affected by a reset pulse and rotate away from their landed position. When the mirrors have rotated to the opposite side, a bias signal is applied to hold the repositioned mirror in place in the opposite state. Mirrors that electrically are floating do not experience the forces generated by the reset voltage and remain in their previous state.

Abstract: A method and system in which a semiconductor wafer having a plurality of dies is inspected through a visual inspection and/or an electrical test. If certain of the dies on the wafer pass the inspection, then windows are mounted or affixed above those certain dies while they are still a part of the wafer.

Abstract: A method of fabricating a micromechanical device. Several of the micromechanical devices are fabricated 20 on a common wafer. After the devices are fabricated, the sacrificial layers are removed 22 leaving open spaces where the sacrificial layers once were. These open spaces allow for movement of the components of the micromechanical device. The devices optionally are passivated 24, which may include the application of a lubricant. After the devices have been passivated, they are tested 26 in wafer form. After testing 26, any surface treatments that are not compatible with the remainder of the processing steps are removed 28. The substrate wafer containing the completed devices receives a conformal overcoat 30. The overcoat layer is thick enough to project the micromechanical structures, but thin and light enough to prevent deforming the underlying micromechanical structures.

Abstract: A method of resetting the mirrors (11, 21) of the mirror elements of a digital micro-mechanical device (DMD) (10, 20). A bias voltage is applied to the mirror elements and the surface upon which they land, but is removed after the address voltage has been switched. (FIG. 4). Immediately before the bias is removed, a reset voltage is added to the bias voltage. The reset voltage signal is comprised of a number of pulses at a frequency that matches the resonant frequency of the mirrors. The magnitude of the reset voltage results in a total applied voltage that permits vibrational energy to build but that is insufficient to cause the mirrors to become unstuck until the end of the reset signal. In other words, the magnitude of the reset voltage is small relative to that of the bias voltage.