Abstract: Systems and methods for selectively etching features in an electronic substrate via a precision dispense apparatus and precision etchant dispense tool are disclosed. The method includes creating a toolpath instruction for etching at least one feature in the substrate, programming the precision dispense apparatus to execute the created toolpath instruction, and causing the precision dispense tool to deposit etchant material onto the surface of the substrate to etch the substrate surface to produce the at least one feature according to the created toolpath instruction. The capabilities of the systems and methods disclosed herein extend to 3D substrates and post-build processing, among others.

Abstract: Systems and methods for custom photolithography masking via a precision dispense apparatus and process are disclosed. Methods include creating a toolpath instruction for depositing opaque onto a substrate, programming a precision dispense apparatus to execute the created toolpath instruction, and causing the precision dispense tool to deposit opaque material onto the substrate to form the photomask. The substrate may be an optically transparent plate or film or may be an electronic substrate where the opaque material is deposited directly onto a photoresist coating. Capabilities of the systems and methods disclosed herein extend to 3D substrates and custom photolithography masking, among others.

Abstract: A shadow mask for a substrate is disclosed. The shadow mask includes a frame circumscribing a surface of the substrate. The shadow mask further includes one or more island mask features within the surface of the substrate, configured to block a deposition of a material onto at least a portion of the surface of the substrate. The shadow mask further includes one or more crossbeams coupling one or more island mask features to the frame at an elevation relative to the substrate. The one or more cross beams are configured to permit deposition of a material onto the substrate surface underneath the one or more crossbeams. In some instances, the shadow mask is manufactured through an additive manufacturing process.

Abstract: A system and method. The system may include an integrated circuit (IC) die. The IC die may have two faces and sides. The system may further include mold material. The mold material may surround at least the sides of the IC die. The IC die may be mechanically interlocked with the mold material.

Abstract: A system and method. The system may include an integrated circuit (IC) die having two faces and sides. The system may further include mold material surrounding at least the sides of the IC die. The system may further include a redistribution layer and signal pads. The redistribution layer may be positioned between (a) the signal pads and (b) the mold material and the IC die. The redistribution layer may have conductive paths at least connecting the IC die and at least some of the signal pads. A surface of the mold material may abut the redistribution layer. The surface of the mold material may include at least one recessed area having at least one conductive feature connected to at least one of the conductive paths or the IC die.

Abstract: A system and method includes pre-warping a mask to induce strain when affixed to a substrate and ensure positive contact between the mask and the substrate during all phases of deposition. A film is applied to the mask at a rate sufficient to impart stress to the film faster than such stress can be released. Depending on the features defined by the mask, the pre-warping may be concentric, linear along one axis, or complex along a plurality of axes.

Abstract: A system and method. The system may include an integrated circuit (IC) die having two faces and sides. The system may further include mold material surrounding at least the sides of the IC die. The system may further include a redistribution layer and signal pads. The redistribution layer may be positioned between (a) the signal pads and (b) the mold material and the IC die. The redistribution layer may have conductive paths at least connecting the IC die and at least some of the signal pads. A a surface of the mold material may abut the redistribution layer. The surface of the mold material may include at least one recessed area having at least one conductive feature connected to at least one of the conductive paths or the IC die.

Abstract: A system and method. The system may include an integrated circuit (IC) die. The IC die may have two faces and sides. The system may further include mold material. The mold material may surround at least the sides of the IC die. The IC die may be mechanically interlocked with the mold material.

Abstract: An integrated circuit (IC) package incorporating controlled induced warping is disclosed. The IC package includes an electronic substrate having an active side upon which semiconducting dies and functional circuits have been lithographed or otherwise fabricated, leading to an inherent warping in the direction of the active side. One or more corrective layers may be deposited to the opposing, or inactive, side of the semiconducting die via thin film deposition (TFD) instrumentation and techniques in order to induce corrective warping of the electronic substrate back toward the horizontal (e.g., in the direction of the inactive side) to a desired degree.

Abstract: An integrated circuit (IC) package incorporating controlled induced warping is disclosed. The IC package includes an electronic substrate having an active side upon which semiconducting dies and functional circuits have been lithographed or otherwise fabricated, leading to an inherent warping in the direction of the active side. One or more corrective layers may be deposited to the opposing, or inactive, side of the semiconducting die via electroplating in order to induce corrective warping of the electronic substrate back toward the horizontal (e.g., in the direction of the inactive side) to a desired degree.

Abstract: A system and method includes pre-warping a mask to induce strain when affixed to a substrate and ensure positive contact between the mask and the substrate during all phases of deposition. A film is applied to the mask at a rate sufficient to impart stress to the film faster than such stress can be released. Depending on the features defined by the mask, the pre-warping may be concentric, linear along one axis, or complex along a plurality of axes.

Abstract: A shadow mask for a substrate is disclosed. The shadow mask includes a frame circumscribing a surface of the substrate. The shadow mask further includes one or more island mask features within the surface of the substrate, configured to block a deposition of a material onto at least a portion of the surface of the substrate. The shadow mask further includes one or more crossbeams coupling one or more island mask features to the frame at an elevation relative to the substrate. The one or more cross beams are configured to permit deposition of a material onto the substrate surface underneath the one or more crossbeams. In some instances, the shadow mask is manufactured through an additive manufacturing process.

Abstract: An integrated circuit (IC) package incorporating controlled induced warping is disclosed. The IC package includes an electronic substrate having an active side upon which semiconducting dies and functional circuits have been lithographed or otherwise fabricated, leading to an inherent warping in the direction of the active side. One or more corrective layers may be deposited to the opposing, or inactive, side of the semiconducting die via thin film deposition (TFD) instrumentation and techniques in order to induce corrective warping of the electronic substrate back toward the horizontal (e.g., in the direction of the inactive side) to a desired degree.

Abstract: An integrated circuit (IC) package incorporating controlled induced warping is disclosed. The IC package includes an electronic substrate having an active side upon which semiconducting dies and functional circuits have been lithographed or otherwise fabricated, leading to an inherent warping in the direction of the active side. One or more corrective layers may be deposited to the opposing, or inactive, side of the semiconducting die via electroplating in order to induce corrective warping of the electronic substrate back toward the horizontal (e.g., in the direction of the inactive side) to a desired degree.