Abstract: Wireless receiver systems and methods for user equipment are described that employ multiple receiver heads. The multiple heads can receive wireless communication signals over different receive paths from different transmission sources. The systems can scan and monitor signal quality from all receiver heads during a scheduled gap in a communication link without interfering with an ongoing communication session.

Abstract: A method for generating rule recommendation utilized in a creation of malware detection rules is described. Meta-information associated with a plurality of events collected during a malware detection analysis of an object by a cybersecurity system is received and a first plurality of features is selected from the received meta-information. Machine learning (ML) models are applied to each of the first plurality of features to generate a score that represents a level of maliciousness for the feature and thereby a degree of usefulness of the feature in classifying the object as malicious or benign. Thereafter, a second plurality of features is selected as the salient features, which are used in creation of the malware detection rules in controlling subsequent operations of the cybersecurity system. The second plurality of features being lesser in number that the first plurality of features.

Abstract: A field effect transistor (FET) including a substrate, a plurality of semiconductor epitaxial layers deposited on the substrate, and a heavily doped gate layer deposited on the semiconductor layers. The FET also includes a plurality of castellation structures formed on the heavily doped gate layer and being spaced apart from each other, where each castellation structure includes at least one channel layer. A gate metal is deposited on the castellation structures and between the castellation structures to be in direct electrical contact with the heavily doped gate layer. A voltage potential applied to the gate metal structure modulates the at least one channel layer in each castellation structure from an upper, lower and side direction.

Abstract: A field effect transistor (FET) including a substrate, a plurality of semiconductor epitaxial layers deposited on the substrate, and a heavily doped gate layer deposited on the semiconductor layers. The FET also includes a plurality of castellation structures formed on the heavily doped gate layer and being spaced apart from each other, where each castellation structure includes at least one channel layer. A gate metal is deposited on the castellation structures and between the castellation structures to be in direct electrical contact with the heavily doped gate layer. A voltage potential applied to the gate metal structure modulates the at least one channel layer in each castellation structure from an upper, lower and side direction.

Abstract: A field effect transistor (FET) device including a substrate and a plurality of semiconductor layers provided on the substrate, where a top semiconductor layer is a heavily doped cap layer and another one of the semiconductor layers directly below the cap layer is a Schottky barrier layer, and where a gate recess is formed through the cap layer and into the Schottky barrier layer. The FET device also includes a gate terminal having a titanium layer, an inhibitor layer provided on the titanium layer and a gold layer provided on the inhibitor layer, where the gate terminal is formed in the recess so that the titanium layer is in contact with the Schottky barrier layer, and where the inhibitor layer is effective for preventing hydrogen gas from being dissociated into hydrogen atoms so as to reduce or prevent hydrogen poisoning of the FET device.

Abstract: Systems and methods for providing a user interface by using a flexible display screen as well as an inflexible display screen. The dual display screens are installed on the same electronic device and may be used to display information simultaneously or alternatively. The flexible display screen can display information in an expanded position and is substantially compacted in size in a retracted position. In response to a user request, the flexible display screen can automatically wind around a rotatable axial connector. The inflexible touchscreen may serve to receive user input with respect to the content displayed on the flexible display screen. An instant size of the flexible display screen can be detected by a sensor and used to adapt a format of the content displayed on the flexible display screen.

Abstract: An imaging system is provided. The system includes a receiver to passively receive a millimeter wave (MMW) power level input from a scene and generates an analog output signal. A driver circuit receives the analog output signal and generates a drive output signal based on the amplitude of the analog output signal. A wavelength converter generates a light intensity output is a replica of a portion of the scene associated with the MMW power level input at a different wavelength range than the MMW power level input wavelength range.

Abstract: A method for forming a shielded gate of a MOSFET includes steps as following: providing a semiconductor substrate having at least one trench, forming a bottom gate oxide region and a shielded gate poly region in the trench of the semiconductor substrate, forming an inter-poly oxide region on the shielded gate poly region through high temperature plasma deposition, poly etching back and oxide etching back; and forming a gate oxide region and a gate poly region on the inter-poly oxide region. By utilizing the etching back processes in replace of traditional chemical mechanical polishing processes, the manufacturing cost of manufacturing a shielded gate structure is reduced, and the total cost of manufacturing a FET is also reduced. Meanwhile, the gate charge is effectively reduced due to the shielded gate structure, so that the performance of a MOSFET is enhanced.

Abstract: A method for forming a shielded gate of a MOSFET includes steps as following: providing a semiconductor substrate having at least one trench, forming a bottom gate oxide region and a shielded gate poly region in the trench of the semiconductor substrate, forming an inter-poly oxide region on the shielded gate poly region through high temperature plasma deposition, poly etching back and oxide etching back; and forming a gate oxide region and a gate poly region on the inter-poly oxide region. By utilizing the etching back processes in replace of traditional chemical mechanical polishing processes, the manufacturing cost of manufacturing a shielded gate structure is reduced, and the total cost of manufacturing a FET is also reduced. Meanwhile, the gate charge is effectively reduced due to the shielded gate structure, so that the performance of a MOSFET is enhanced.

Abstract: An electronic system. The electronic system includes a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point and an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point. The second waveguide-coupling point is coupled to the first circuit-coupling point; the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point; the input signal and the output signal have frequencies in a terahertz frequency range; and the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically.

Abstract: A method for thawing and infusing partially frozen fruits or vegetables. Individually quick frozen fruits or vegetables are introduced into a mixing kettle. An infusion solution is circulated from a solution tank, through a bed of fruits or vegetables, and back to a solution tank. The infusion solution is maintained at a temperature of about 45° to about 50° F. and at a Brix of about 40° to about 50°. The infusion solution is pumped and circulated at a high rate which reduces thaw time but does not result in product degradation. After thawing, the pumping and re-circulating rate is decreased to allow for increased infusion efficiency. Pressure pulses are applied to the product in the mixing tank which decreases the infusion time. Thus, thawed and infused fruit and vegetables are produced quickly and with minimal product degradation.

Abstract: A method for thawing and infusing partially frozen fruits or vegetables. Individually quick frozen fruits or vegetables are introduced into a mixing kettle. An infusion solution is circulated from a solution tank, through a bed of fruits or vegetables, and back to a solution tank. The infusion solution is maintained at a temperature of about 45° to about 50° F. and at a Brix of about 40° to about 50°. The infusion solution is pumped and circulated at a high rate which reduces thaw time but does not result in product degradation. After thawing, the pumping and re-circulating rate is decreased to allow for increased infusion efficiency. Pressure pulses are applied to the product in the mixing tank which decreases the infusion time. Thus, thawed and infused fruit and vegetables are produced quickly and with minimal product degradation.

Abstract: The present invention discloses a method for making a multi-grain, whole grain baked snack food product with a soft, crunchy texture similar to a cracker. Ingredient formula ranges have been determined that maximize the amount and number of nutritious whole grains present in the snack food, while still keeping the texture soft and crunchy, and the color and flavor acceptable. The ingredients are combined with water to make a dough, which is then sheeted and cut into pieces. The pieces are baked to produce a multi-grain, whole grain baked snack food.

Abstract: An electronic system. The electronic system includes a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point and an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point. The second waveguide-coupling point is coupled to the first circuit-coupling point; the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point; the input signal and the output signal have frequencies in a terahertz frequency range; and the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically.

Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).

Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).

Abstract: A method for thawing and infusing partially frozen fruits or vegetables. Individually quick frozen fruits or vegetables are introduced into a mixing kettle. An infusion solution is circulated from a solution tank, through a bed of fruits or vegetables, and back to a solution tank. The infusion solution is maintained at a temperature of about 45° to about 50° F. and at a Brix of about 40° to about 50°. The infusion solution is pumped and circulated at a high rate which reduces thaw time but does not result in product degradation. After thawing, the pumping and re-circulating rate is decreased to allow for increased infusion efficiency. Pressure pulses are applied to the product in the mixing tank which decreases the infusion time. Thus, thawed and infused fruit and vegetables are produced quickly and with minimal product degradation.

Abstract: The present invention discloses a method for making a multi-grain, whole grain baked snack food product with a soft, crunchy texture similar to a cracker. Ingredient formula ranges have been determined that maximize the amount and number of nutritious whole grains present in the snack food, while still keeping the texture soft and crunchy, and the color and flavor acceptable. The ingredients are combined with water to make a dough, which is then sheeted and cut into pieces. The pieces are baked to produce a multi-grain, whole grain baked snack food.

Abstract: The present invention discloses a method for making a multi-grain, whole grain baked snack food product with a soft, crunchy texture similar to a cracker. Ingredient formula ranges have been determined that maximize the amount and number of nutritious whole grains present in the snack food, while still keeping the texture soft and crunchy, and the color and flavor acceptable. The ingredients are combined with water to make a dough, which is then sheeted and cut into pieces. The pieces are baked to produce a multi-grain, whole grain baked snack food.

Abstract: An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction between the gate metal stack and a Schottky barrier layer in the HEMT structure. The refractory metal layer reduces or eliminates long-term degradation of the Schottky junction between the gate metal and the barrier layer, thereby dramatically improving long-term reliability of InP HEMTs, but without sacrifice in HEMT performance, whether used as a discrete device or in an integrated circuit.