Abstract: The present invention relates to efficient synthetic processes useful in the preparation of Compound A, a BTK inhibitor of Formula (I): or a pharmaceutically acceptable salt thereof, including the preparation of intermediates used to make Compound A or a pharmaceutically acceptable salt thereof.

Abstract: In an aspect, a method of filling a plurality of cooling holes in an airfoil component, the method comprises injecting a curable composition into a fill channel such that the curable composition flows through the fill channel to the plurality of cooling holes; forming a plurality of beads of the curable composition on a surface of the component over the plurality of cooling holes; directing a radiation to the respective beads in directions parallel to the respective central axes of the cooling holes associated with the respective beads to cure curable composition of the respective beads; and heating the component to cure the curable composition located in the fill channel.

Abstract: In an aspect, a method of filling a plurality of cooling holes in an airfoil component, the method comprises injecting a curable composition into a fill channel such that the curable composition flows through the fill channel to the plurality of cooling holes; forming a plurality of beads of the curable composition on a surface of the component over the plurality of cooling holes; directing a radiation to the respective beads in directions parallel to the respective central axes of the cooling holes associated with the respective beads to cure curable composition of the respective beads; and heating the component to cure the curable composition located in the fill channel.

Abstract: In an aspect, a method of filling a plurality of cooling holes in an airfoil component, the method comprises injecting a curable composition into a fill channel such that the curable composition flows through the fill channel to the plurality of cooling holes; forming a plurality of beads of the curable composition on a surface of the component over the plurality of cooling holes; directing a radiation to the respective beads in directions parallel to the respective central axes of the cooling holes associated with the respective beads to cure curable composition of the respective beads; and heating the component to cure the curable composition located in the fill channel.

Abstract: In a device for controlling a working fluid with low freezing point circulating in a closed loop working on a Rankine cycle, the loop includes a compression/circulation pump for the fluid in liquid form, a heat exchanger swept by a hot source for evaporation of the fluid, expansion machine for the fluid in vapour form, a cooling exchanger swept by a cold source for condensation of the working fluid, a working fluid tank and working fluid circulation lines. The working fluid tank is connected to a depression generator.

Abstract: A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of <1019 atoms/cm3 and travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of <1019 electrons/cm3, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.

Abstract: The present invention relates to a device for controlling a working fluid with low freezing point circulating in a closed loop (10) working on a Rankine cycle, said loop comprising a compression/circulation pump (12) for the fluid in liquid form, a heat exchanger (18) swept by a hot source (24) for evaporation of said fluid, expansion means (30) for the fluid in vapour form, a cooling exchanger (42) swept by a cold source (F) for condensation of the working fluid, a working fluid tank (48) and working fluid circulation lines (52, 54, 56, 58, 60, 62). According to the invention, tank (48) is connected to a depression generator (50).

Abstract: A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of <1019 atoms/cm3 and travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of <1019 electrons/cm3, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.

Abstract: Systems, assemblies and methods for thermally managing a grazing incidence collector (GIC) for EUV lithography applications are disclosed. The GIC thermal management assembly includes a GIC mirror shell interfaced with a jacket to form a sealed chamber. An open cell, heat transfer (OCHT) material is disposed within the metal chamber and is thermally and mechanically bonded with the GIC mirror shell and jacket. A coolant is flowed in an azimuthally symmetric fashion through the OCHT material between input and output plenums to effectuate cooling when the GIC thermal management assembly is used in a GIC mirror system configured to receive and form collected EUV radiation from an EUV radiation source.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Sn vapor from a Sn vapor source of the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device may be used to increase the amount of EUV radiation provided to the intermediate focus. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates a rotating Sn rod in the target portion to generate the EUV radiation. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Xenon liquid in the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: Systems, assemblies and methods for thermally managing a grazing incidence collector (GIC) for EUV lithography applications are disclosed. The GIC thermal management assembly includes a GIC mirror shell interfaced with a jacket to form a sealed chamber. An open cell, heat transfer (OCHT) material is disposed within the metal chamber and is thermally and mechanically bonded with the GIC mirror shell and jacket. A coolant is flowed in an azimuthally symmetric fashion through the OCHT material between input and output plenums to effectuate cooling when the GIC thermal management assembly is used in a GIC mirror system configured to receive and form collected EUV radiation from an EUV radiation source.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates a rotating Sn rod in the target portion to generate the EUV radiation. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Xenon ice provided by the target portion to an irradiation location. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Xenon liquid in the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates a Sn wire provided by the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Sn vapor from a Sn vapor source of the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device may be used to increase the amount of EUV radiation provided to the intermediate focus. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: The present invention relates to a method and to a device for sampling gaseous compounds contained in a gas stream, notably in diluted exhaust gases from an internal-combustion engine. According to the invention, the method consists in providing passage of the gas stream through at least one sampling channel (26, 26a; 80, 80a) containing an adsorbent that traps the polycyclic aromatic hydrocarbons in gaseous form.

Abstract: A unit for sampling aldehydes and ketones contained in diluted exhaust gases from thermal combustion engines has a specific trapping circuit and a simulation circuit that simulates the specific trapping circuit. The specific trapping circuit and the simulation circuit are arranged in parallel so that the diluted gases can be passed for some time in the simulation circuit (5) before they are passed into the specific trapping circuit wherein aldehydes and ketones are trapped.