Abstract: A plasma reactor has an array of plural gas injectors arranged around a circular side wall that are individually controlled.

Abstract: A plasma reactor has an array of plural gas injectors arranged around a circular side wall that are individually controlled.

Abstract: A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.

Abstract: A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.

Abstract: A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method includes defining a photoresist pattern on the top surface of the mask, the pattern including a periodic structure having a periodic spacing between elements of the structure. The method further includes placing the mask on a support pedestal in a plasma reactor chamber and generating a plasma in the chamber to etch the top surface of the mask through openings in the photoresist pattern. The method also includes transmitting light through the pedestal and through the bottom surface of the mask, while viewing through the support pedestal light reflected from the periodic structure and detecting an interference pattern in the reflected light. The method further includes determining from the interference pattern a depth to which periodic structure has been etched in the top surface.

Abstract: A plasma reactor for etching a workpiece such as a rectangular or square mask, includes a vacuum chamber having a ceiling and a sidewall and a workpiece support pedestal within the chamber including a cathode having a surface for supporting a workpiece, the surface comprising plural respective zones, the respective zones of the surface being formed of respective materials of different electrical characteristics. The zones can be arranged concentrically relative to an axis of symmetry of the wafer support pedestal.

Abstract: A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply.

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.

Abstract: A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer. The reactor includes a vacuum chamber having a ceiling and a sidewall. A workpiece support pedestal within the chamber includes a metal cathode having a support surface facing the ceiling and defining a support plane for supporting a workpiece. The cathode has a hollow space formed within its interior. The reactor further includes a movable metal element within the hollow space and a mechanism for controlling a distance between the metal element and the support plane.

Abstract: A method of fabricating yttria parts is provided herein. In one embodiment, the method includes sintering a yttria sample, machining the sintered sample to form a part, and annealing the part in a three-stage process that includes heating the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate.

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.

Abstract: A method and apparatus for etching photomasks are provided herein. The apparatus includes a process chamber with a shield above a substrate support. The shield comprises a plate with apertures, and the plate has two zones with at least one characteristic, such as material or potential bias, that is different from each other. The method provides for etching a photomask substrate with a distribution of ions and neutral species that pass through the shield.

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.

Abstract: Methods of operating inductively coupled plasma (ICP) reactors having ICP sources and substrate bias with phase control are provided herein. In some embodiments, a method of operating a first plasma reactor having a source RF generator inductively coupled to the first plasma reactor on one side of a substrate support surface of a substrate support within the first plasma reactor and a bias RF generator coupled to the substrate support on an opposing side of the substrate support surface, wherein the source RF generator and the bias RF generator provide respective RF signals at a common frequency may include selecting a desired value of a process parameter for a substrate to be processed; and adjusting the phase between respective RF signals provided by the source RF generator and the bias RF generator to a desired phase based upon a predetermined relationship between the process parameter and the phase.

Abstract: An apparatus for integrating metrology and etch processing is disclosed. The apparatus comprises a multi-chamber system having a transfer chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the etch chamber and the metrology chamber. A method of processing a substrate and performing metrology measurement using this apparatus is also disclosed.

Abstract: A method for processing a workpiece in a plasma reactor chamber by applying RF source power to inner and outer source power applicators, and introducing a process gas into the reactor while rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the plasma distribution is nearly symmetrical, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution is nearly uniform.

Abstract: A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece.

Abstract: A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry.

Abstract: A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry.