Abstract: An ion source is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.

Abstract: An ion source for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A portion of a cathode extends into an opening in the gas confinement chamber. The cathode includes a cathode body defining an interior region in which a filament is disposed. The cathode body comprises an inner tubular member a coaxial outer tubular member and an endcap having a reduced cross section body portion with a radially extending rim. The endcap is pressed into the inner tubular member. The filament is energized to heat the endcap which, in turn, emits electrons into the gas ionization zone. The filament is protected from energized plasma in the gas ionization zone by the cathode body.

Abstract: An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducting an ionizable gas into the gas confinement chamber. A cathode is supported by the base and positioned with respect to said gas confinement chamber to emit ionizing electrons into the gas ionization zone. The cathode comprises a tubular conductive body that partially extends into the gas confinement chamber and includes a conductive cap that faces into the gas confinement chamber for emitting ionizing electrons into the gas confinement chamber.

Abstract: A platen assembly (66) for holding a semiconductor wafer (30) for vacuum processing. The platen is a substantially solid, circular plate (194) which is surrounded by a movable clamp assembly (192) in the form of a ring having formed thereon a first set of projections (257, 258) for initially receiving a wafer above the plate, and a second set of projections (256) spaced axially from the first set for clamping the wafer to the plate. The ring is formed of two parts (251, 252) spaced apart axially and connected by spring members (254). A slot (255) is formed in the ring to permit the entry of wafers between the sets of projections. The clamp assembly is moved between a wafer receiving position and a clamping position by an annular fluid cylinder (228) and piston (232) assembly. The fluid cylinder and piston assembly includes bellows seals acting between the cylinder and piston rods (238) to maintain the vacuum integrity of the system.

Abstract: A sealing arrangement for a vacuum processing system for semiconductor wafers which is effective to apply a sealing force to a valve element (66) between chambers of the processing system. The valve element is defined by a platen which holds wafers (30) for transfer between a horizontal receiving position within a staging chamber (14) to a vertical position within a processing chamber (16-19). The sealing arrangement includes a pair of toggle mechanisms (268) which are manually operable from outside the staging chamber and which, in conjunction with the closing force applied by the platen operating mechanism (165) are effective to maintain vacuum integrity within the staging chamber when the process chamber is at atmospheric pressure or removed for servicing.