Abstract: A semiconductor device comprising a dual photodetector for use in an array to locate points of peak intensities incident upon the array. Each pixel in the array is comprised of a dual photodetector element. An n-type well is located within a p-substrate with highly doped p-contact areas located along the periphery of the n-well at the surface. A metal or polysilicon gate electrode covers the surface between the p-contacts and an applied gate voltage creates an inverted p-channel to form a lateral effect phototransistor. A second photodetector is formed at the junction of the n-well and p-substrate. The second photodetector from each pixel produces a current which is connected to a processing circuit to determine which pixel is the brightest above a designated threshold. All pixels above the threshold are sequentially identified.

Abstract: A fuel injection nozzle for supplying fuel to an internal combustion engine includes a fuel pressure actuated valve member which moves into a chamber when it is lifted from its seating. The displacement of fuel in the chamber is served by a spring biased plunger which forms part of an electrical switch.

Abstract: An energy-absorbing device suitable as an automobile bumper using sinuous (corrugated), elastomeric ribs, which can be either attached to a connecting member at one end and unattached at the other end or unattached at both ends. These ribs buckle in a direction normal to the impact force and modulate that force.