Patents by Inventor Richard Mett

Richard Mett has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050017720
    Abstract: A sample holder for use in an EPR spectrometer is extruded using a material having a low dielectric constant. The extruded sample holder has a plurality of channels formed in it for holding sample material for testing. The shape and orientation of these channels are such that losses due to the high dielectric constant of the sample are minimized. Sample holders for cylindrical and rectangular cavity resonators and uniform field cavity resonators are disclosed, as well as for two-gap and four-gap loop-gap resonators.
    Type: Application
    Filed: July 23, 2004
    Publication date: January 27, 2005
    Inventors: Richard Mett, James Hyde, Jason Sidabras
  • Patent number: 6304424
    Abstract: A method and apparatus for retaining a substrate, such as a semiconductor wafer, upon an electrostatic chuck within a semiconductor wafer processing system. Specifically, the apparatus contains high voltage, DC power supply that is capable of both sourcing and sinking current at any polarity of output voltage level. This power supply is coupled to at least one electrode of an electrostatic chuck. Consequently, the power supply can be used to dynamically control the chucking voltage to apply a negative potential difference between said wafer and chuck.
    Type: Grant
    Filed: May 20, 1999
    Date of Patent: October 16, 2001
    Assignee: Applied Materials Inc.
    Inventors: Richard Mett, Siamak Salimian
  • Publication number: 20010009139
    Abstract: An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.
    Type: Application
    Filed: March 1, 2001
    Publication date: July 26, 2001
    Inventors: Hongqing Shan, Claes Bjorkman, Paul Luscher, Richard Mett, Michael Welch
  • Patent number: 6232236
    Abstract: An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.
    Type: Grant
    Filed: August 3, 1999
    Date of Patent: May 15, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Hongqing Shan, Claes Bjorkman, Paul Luscher, Richard Mett, Michael Welch