Abstract: A bipolar transistor designed to support a substantially uniform current density in base and collector regions to prevent the characteristic early fall-off of bipolar transistor current gain, and to improve the forward safe operating area performance. The advantages of the present invention are achieved by optimally spacing the neighboring emitters in relation to base thickness and further by maintaining a symmetrical topology by the self-aligned formation of emitters and base contacts. The spacing distance between the neighboring emitters does not exceed the base thickness. As a result, the current density below each emitter island is substantially uniform and the transistor as a whole can conduct a higher total current. Moreover, the transistor inhibits formation of current filaments and hot spots because the electric field in the collector region is uniform.

Abstract: Capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates.

Abstract: A bipolar transistor designed to support a substantially uniform current density in base and collector regions to prevent the characteristic early fall-off of bipolar transistor current gain, and to improve the forward safe operating area performance. The advantages of the present invention are achieved by optimally spacing the neighboring emitters in relation to base thickness and further by maintaining a symmetrical topology by the self-aligned formation of emitters and base contacts. The spacing distance between the neighboring emitters does not exceed the base thickness. As a result, the current density below each emitter island is substantially uniform and the transistor as a whole can conduct a higher total current. Moreover, the transistor inhibits formation of current filaments and hot spots because the electric field in the collector region is uniform.

Abstract: The present invention comprises capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates. Exemplary embodiments and methods of fabrication are disclosed.

Abstract: Semiconductor diodes having a low forward voltage conduction drop, a low reverse leakage current and a high voltage capability suitable for use in integrated circuits as well as for discrete devices. The semiconductor diodes are fabricated as field effect devices having a common gate and drain connection by a process which provides very short channels, shallow drain regions and longitudinally graded junctions. Continuation of the gate/drain contact layer over specially located, tapered edge field oxide maximizes the breakdown voltage of the devices. The preferred fabrication technique utilizes four masking steps, all without any critical mask alignment requirements. Various embodiments are disclosed.

Abstract: The present invention discloses method for fabricating, and the structure of, a unique and novel bipolar transistor. The bipolar transistor of the present invention has a substantially uniform current density in base and collector regions. This uniform current density prevents the characteristic early fall-off of bipolar transistor current gain, and improves the forward safe operating area performance. As such, the bipolar transistor of the invention increases current gain at high collector currents, and expands the current and voltage region over which the device may safely operated. The advantages of the present invention are achieved by optimally spacing the neighboring emitters in relation to base thickness and further by maintaining a symmetrical topology by the self-aligned formation of emitters and base contacts.

Abstract: A readily manufacturable field controlled thyristor with a first semiconductor region of n-type conductivity, a second semiconductor region of p-type in contact with said first region, a void penetrating through said first and second semiconductor regions, a fourth semiconductor region of n-type forming a channel adjacent to said void, a fifth semiconductor region, of p-type, in contact with said third region. The device has a large tolerance for deviations in process parameter precision and accuracy, which enables the device to be produced at a low cost.

Abstract: A bone dowel assembly for attaching a tissue to a bone includes an approximately cylindrical shank having a continuous borehole which extends axially from a free end of the shank to a second end of the shank, and two slots in the outside surface of the shank which communicate with the borehole and extend from the second end of the shank partially along its length to form reeds or tines which expand radially outwardly when an expansion part is forced into the borehole. The expansion part is conical and includes at least one aperture which extends through the expansion part transversely to the longitudinal axis of the shank. Before insertion into a hole drilled in the bone, the assembly is threaded from the free end of the shank through the borehole, out through one of the slots, past an outside portion of the expansion part, through the aperture, again past an outside portion of the expansion part, through the other slot, and back through the borehole to the free end of the shank.

Abstract: A package for a semiconductor device includes multiple layers which are fused together to encapsulate the device in a package which has a size approaching the size of the unpackaged device. The compact package facilitates heat transfer from the device, thus making it particularly advantageous for high power applications. Electrical contacts with the device are provided as contact pads on the surface of the package. Primary materials used in construction of the package include glass and ceramics, although other materials such as resins and epoxy could also be used. The multiple layers comprising the package are welded or fused together without having any adhesive, solder, etc. between the layers. Thus, the assembly of the package is an efficient one step process wherein electrical and thermal contacts with the electronic device are made simultaneously with the sealing operation.