Abstract: An analyzer determining/classifying aircraft air contaminants using a contaminant collector comprises a microporous medium, a bypass; a sensor generating frequency response when contaminant mass is added to/removed from the sensor, receiving contaminants desorbed from the medium; a first sample flow path, passing through the collector; a second sample flow path, bypassing the collector; a frequency measurement device, measuring response generated by the sensor as contaminant is added to and removed; a computer readable medium bearing a contaminant recognition program and calibration data; and, a processor executing the program, the program including a module classifying the contaminant and measuring response signal magnitudes, and a module using the data for comparison with magnitude of the response generated by the sensor to calculate contaminant concentration and determine a target value for contaminant type, and using measured response magnitudes to adjust first sample flow rates and/or flow durations base

Abstract: A method and an aircraft air contaminant analyzer for determining and classifying air contaminants, providing a sample flow path and bypass flow path bypassing the sample flow path, are disclosed, the analyzer comprising a contaminant collector comprising a medium desorbing captured contaminants, the collector providing a first sample flow path; a heater vaporizing captured contaminants; a bypass comprising a channel including a second sample flow path, the channel bypassing the collector; a sensor responding when air contaminant mass is added to or removed from the sensor, for classifying contaminant type; the sensor receiving contaminants desorbed from the medium; a frequency measurement device measuring the response generated by the sensor as the air contaminant is added to and removed from the sensor; a computer readable medium bearing a contaminant recognition program and calibration data; and, a processor executing the program, the program including a module classifying the contaminant by type.

Abstract: An air contaminant collector device for use in an aircraft air contaminant analyzer, and a method for its use, are disclosed.

Abstract: Disclosed are methods for determining and classifying aircraft air contaminants comprising one or more of: turbine engine oil, hydraulic fluid and deicing fluid using contaminant analyzers comprising a contaminant collector comprising a membrane and a heater vaporizing the contaminants; a gravimetric sensor generating a response when contaminant mass is added to or removed from the sensor, the sensor receiving contaminants desorbed from the heated membrane; a frequency measurement device, measuring the response generated by the sensor as the contaminant is added to and removed from the sensor; a computer readable medium bearing a contaminant recognition program and calibration data; a processor executing the program, the program including a module classifying contaminants by type, and a module using the data for comparison with magnitude of response generated by the sensor to calculate contaminant concentration; and, a pump, generating flow of air through the collector before and after the membrane is heated.

Abstract: Methods for determining and classifying by type aircraft air contaminants, and aircraft air contaminant analyzers, are disclosed.

Abstract: Disclosed are methods for determining and classifying aircraft air contaminants using contaminant analyzers comprising a contaminant collector comprising a membrane and a heater vaporizing captured contaminants; a gravimetric sensor generating a proportionate response when contaminant mass is added to or removed from the sensor, the sensor arranged to receive contaminants desorbed from the membrane when the membrane is heated; a frequency measurement device, measuring the response generated by the sensor as the contaminant is added to and removed from the sensor; a computer readable medium bearing a contaminant recognition program and calibration data; a processor executing the recognition program, the program including a module classifying contaminants by type, and a module using the calibration data for comparison with magnitude of the response generated by the sensor to calculate contaminant concentration; and, a pump, generating flow of aircraft air through the contaminant collector before and after the m

Abstract: A method and an aircraft air contaminant analyzer for determining and classifying by type aircraft air contaminants, providing a sample flow path and bypass flow path bypassing the sample flow path, are disclosed.

Abstract: An air contaminant collector device for use in an aircraft air contaminant analyzer, and a method for its use, are disclosed.

Abstract: A method and an aircraft air contaminant analyzer for determining and classifying by type aircraft air contaminants, providing a first sample flow path and second sample flow path, are disclosed.

Abstract: Methods for determining and classifying by type aircraft air contaminants, and aircraft air contaminant analyzers, are disclosed.

Abstract: A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.

Abstract: A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.

Abstract: A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.

Abstract: A micromechanical device includes a single crystal micromechanical structure where at least a portion of the micromechanical structure is capable of performing a mechanical motion. An epitaxial layer covers at least a portion of the micromechanical structure. In one embodiment, the micromechanical structure and the epitaxial layer are formed of different materials.

Abstract: A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.

Abstract: A method of electrochemically etching a device, including forming a semiconductor substrate having a p-type semiconductor region on an n-type semiconductor region. A discrete semiconductor region is formed on the p-type semiconductor region and is isolated from the n-type semiconductor region. The n-type semiconductor region is exposed to an electrolyte with an electrical bias applied between the n-type semiconductor region and the electrolyte. The n-type semiconductor region is also exposed to radiation having energy sufficient to excite electron-hole pairs. In addition, a p-n junction reverse bias is applied between the p-type semiconductor region and the n-type semiconductor region to prevent the p-type semiconductor region and the discrete semiconductor region from etching while portions of the n-type semiconductor region exposed to the electrolyte and the radiation are etched.

Abstract: A method of electrochemically etching a device, including forming a semiconductor substrate having a p-type semiconductor region on an n-type semiconductor region. A discrete semiconductor region is formed on the p-type semiconductor region and is isolated from the n-type semiconductor region. The n-type semiconductor region is exposed to an electrolyte with an electrical bias applied between the n-type semiconductor region and the electrolyte. The n-type semiconductor region is also exposed to radiation having energy sufficient to excite electron-hole pairs. In addition, a p-n junction reverse bias is applied between the p-type semiconductor region and the n-type semiconductor region to prevent the p-type semiconductor region and the discrete semiconductor region from etching while portions of the n-type semiconductor region exposed to the electrolyte and the radiation are etched.

Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.

Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.

Abstract: An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3SiC2 that is deposited on the silicon carbide component.