Abstract: The present invention belongs to the technical field of semiconductors and discloses a copolar integrated diode, including a plurality of diode structures sharing anodes or cathodes. The copolar integrated diode comprises a semiconductor substrate; a low-doped drift region is doped on the semiconductor substrate; two or more electrodes are connected to the low-doped drift region; wherein, between the low-doped drift region and the semiconductor substrate or in the case of forming a PN junction in the low-doped drift region, the distances from the two or more electrodes to the PN junction of the diode structure are different. The present invention provides an integrated structure of a plurality of diodes, which is low in space occupancy and high in security.