Patents by Inventor Richard Osgood, Jr.

Richard Osgood, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8287642
    Abstract: Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing. In some embodiments, methods include forming a layer of silicon, and etching the layer of silicon to form a lattice of holes with a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: October 16, 2012
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: Chee Wei Wong, James F. McMillan, Xiaodong Yang, Richard Osgood, Jr., Jerry Dadap, Nicolae Panoiu
  • Publication number: 20110147344
    Abstract: Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing. In some embodiments, methods include forming a layer of silicon, and etching the layer of silicon to form a lattice of holes with a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing.
    Type: Application
    Filed: November 17, 2010
    Publication date: June 23, 2011
    Applicant: The Trustees of Columbia University in The City of New York
    Inventors: Chee Wei Wong, James F. McMillan, Xiaodong Yang, Richard Osgood, JR., Jerry Dadap, Nicolae Panoiu
  • Patent number: 7869470
    Abstract: Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing. In some embodiments, methods include forming a layer of silicon, and etching the layer of silicon to form a lattice of holes with a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: January 11, 2011
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: Chee Wei Wong, James F. McMillan, Xiaodong Yang, Richard Osgood, Jr., Jerry Dadap, Nicolae C. Panoiu
  • Publication number: 20090092156
    Abstract: Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing. In some embodiments, methods include forming a layer of silicon, and etching the layer of silicon to form a lattice of holes with a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing.
    Type: Application
    Filed: August 31, 2006
    Publication date: April 9, 2009
    Inventors: Chee Wei Wong, James F. McMillan, Xiaodong Yang, Richard Osgood, JR., Jerry Dadap, Nicolae C. Panoiu