Patents by Inventor Richard Oxland

Richard Oxland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistors, semiconductor devices, and methods of manufacture thereof
    Patent number: 9252237
    Abstract: Transistors, semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a transistor over a workpiece. The transistor includes a sacrificial gate material comprising a group III-V material. The method includes combining a metal (Me) with the group III-V material of the sacrificial gate material to form a gate of the transistor comprising a Me-III-V compound material.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: February 2, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Gerben Doornbos, Richard Oxland
  • FinFET with a buried semiconductor material between two fins
    Patent number: 8987835
    Abstract: A fin structure for a fin field effect transistor (FinFET) device is provided. The device includes a substrate, a first semiconductor material disposed on the substrate, a shallow trench isolation (STI) region disposed over the substrate and formed on opposing sides of the first semiconductor material, and a second semiconductor material forming a first fin and a second fin disposed on the STI region, the first fin spaced apart from the second fin by a width of the first semiconductor material. The fin structure may be used to generate the FinFET device by forming a gate layer formed over the first fin, a top surface of the first semiconductor material disposed between the first and second fins, and the second fin.
    Type: Grant
    Filed: March 27, 2012
    Date of Patent: March 24, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Georgios Vellianitis, Mark van Dal, Blandine Duriez, Richard Oxland
  • Transistors, Semiconductor Devices, and Methods of Manufacture Thereof
    Publication number: 20140061722
    Abstract: Transistors, semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a transistor over a workpiece. The transistor includes a sacrificial gate material comprising a group III-V material. The method includes combining a metal (Me) with the group III-V material of the sacrificial gate material to form a gate of the transistor comprising a Me-III-V compound material.
    Type: Application
    Filed: September 5, 2012
    Publication date: March 6, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Gerben Doornbos, Richard Oxland
  • Fin Structure for a FinFET Device
    Publication number: 20130256759
    Abstract: A fin structure for a fin field effect transistor (FinFET) device is provided. The device includes a substrate, a first semiconductor material disposed on the substrate, a shallow trench isolation (STI) region disposed over the substrate and formed on opposing sides of the first semiconductor material, and a second semiconductor material forming a first fin and a second fin disposed on the STI region, the first fin spaced apart from the second fin by a width of the first semiconductor material. The fin structure may be used to generate the FinFET device by forming a gate layer formed over the first fin, a top surface of the first semiconductor material disposed between the first and second fins, and the second fin.
    Type: Application
    Filed: March 27, 2012
    Publication date: October 3, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Georgios Vellianitis, Mark van Dal, Blandine Duriez, Richard Oxland