Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to overlay optimization and methods of manufacture. The method includes performing, by a computing device, an exposure with a correction parameter to a first wafer; performing, by the computing device, a decorrection of the correction parameter; collecting, by the computing device, overlay data in response to the exposure and the decorrection; estimating, by the computing device, an optimal parameter from the overlay data; and applying, by the computing device, the optimal parameter to a second wafer to align an overlay in the second wafer.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to overlay optimization and methods of manufacture. The method includes performing, by a computing device, an exposure with a correction parameter to a first wafer; performing, by the computing device, a decorrection of the correction parameter; collecting, by the computing device, overlay data in response to the exposure and the decorrection; estimating, by the computing device, an optimal parameter from the overlay data; and applying, by the computing device, the optimal parameter to a second wafer to align an overlay in the second wafer.

Abstract: A method for initializing individual exposure field parameters of an overlay controller is disclosed including initializing a first control thread having a first context associated with a first product type, wherein a first layout of first exposure fields is defined for the first product type for processing in a stepper. The method further includes remapping a set of previous control state data for a set of control threads associated with other product types different than the first product type into the first layout. The other product types have layouts of second exposure fields different than the first layout. An initial set of control state data for the first control thread associated with the first product type is generated using the remapped previous control state data. The stepper is configured for processing a first substrate of the first product type using the initial set of control state data.

Abstract: A method for initializing individual exposure field parameters of an overlay controller is disclosed including initializing a first control thread having a first context associated with a first product type, wherein a first layout of first exposure fields is defined for the first product type for processing in a stepper. The method further includes remapping a set of previous control state data for a set of control threads associated with other product types different than the first product type into the first layout. The other product types have layouts of second exposure fields different than the first layout. An initial set of control state data for the first control thread associated with the first product type is generated using the remapped previous control state data. The stepper is configured for processing a first substrate of the first product type using the initial set of control state data.

Abstract: Methods according to the disclosure include: identifying at least one non-candidate tool which previously processed at least one prior semiconductor wafer, and represented in a set of historical data, the set of historical data including manufacturing settings for performing an operation on the at least one prior semiconductor wafer, and a candidate tool which has not previously performed the operation on at least one prior semiconductor wafer, the candidate tool not being represented in the set of historical data; determining whether the set of historical data predicts the performing of the operation with the candidate tool based on the manufacturing settings for performing the operation on the at least one prior semiconductor wafer; and in response to the set of historical data predicting the performing of the operation with the candidate tool, selecting a manufacturing setting for the candidate tool based on the set of historical data.

Abstract: Methods according to the disclosure include: identifying at least one non-candidate tool which previously processed at least one prior semiconductor wafer, and represented in a set of historical data, the set of historical data including manufacturing settings for performing an operation on the at least one prior semiconductor wafer, and a candidate tool which has not previously performed the operation on at least one prior semiconductor wafer, the candidate tool not being represented in the set of historical data; determining whether the set of historical data predicts the performing of the operation with the candidate tool based on the manufacturing settings for performing the operation on the at least one prior semiconductor wafer; and in response to the set of historical data predicting the performing of the operation with the candidate tool, selecting a manufacturing setting for the candidate tool based on the set of historical data.

Abstract: A method includes receiving tool trace data from a group of tools of the same type in a computing device. A tool fingerprint is generated for each tool using the tool trace data for the tools in group other than the tool for which the tool fingerprint is generated in the computing device. A tool score is generated for each tool based on its tool trace data and its associated fingerprint in the computing device. A fault condition with at least a selected tool is identified based on the tool scores in the computing device.

Abstract: A method for estimating a state of a process implemented by a tool for fabricating workpieces includes collecting metrology data associated with a subset of workpieces processed in the tool. The collecting exhibits an irregular pattern. Metrology data associated with a selected state observation is received for a selected run of the process. A tuning factor for the selected run is determined based on the irregular pattern. The selected state observation is discounted based on the determined tuning factor. A state estimate of the process is determined based on the discounted selected state observation. At least one process tool operable to implement the process is controlled based on the state estimate.

Abstract: A method includes receiving measured values for a plurality of electrical test parameters associated with integrated circuit devices on at least one wafer measured prior to completion of the wafer. Values of the electrical test parameters are predicted. The measured values are compared to the predicted values to generate residual values associated with the electrical test parameters. At least one performance metric associated with the devices is generated based on the residual values.

Abstract: A method for estimating a state of a process implemented by a tool for fabricating workpieces includes collecting metrology data associated with a subset of workpieces processed in the tool. The collecting exhibits an irregular pattern. Metrology data associated with a selected state observation is received for a selected run of the process. A tuning factor for the selected run is determined based on the irregular pattern. The selected state observation is discounted based on the determined tuning factor. A state estimate of the process is determined based on the discounted selected state observation. At least one process tool operable to implement the process is controlled based on the state estimate.

Abstract: A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identify and reject outlier data. The process is controlled based on the metrology data remaining after the rejection of the outlier data.

Abstract: A method includes receiving measured values for a plurality of electrical test parameters associated with integrated circuit devices on at least one wafer measured prior to completion of the wafer. Values of the electrical test parameters are predicted. The measured values are compared to the predicted values to generate residual values associated with the electrical test parameters. At least one performance metric associated with the devices is generated based on the residual values.

Abstract: A method includes defining a plurality of simple sampling rules for selecting material for metrology. Each simple sampling rule has an associated penalty. At least one combination sampling rule relating a subset of at least two simple sampling rules is defined. The combination sampling rule has an associated penalty. The penalties are assessed responsive to a previous material selection not satisfying the simple sampling rules or the combination sampling rule. Material is selected for subsequent metrology based on the sampling rules and the assessed penalties. At least one characteristic of the selected material is measured.

Abstract: A method for estimating a state associated with a process includes receiving a state observation associated with the process. The state observation has an associated process time. A weighting factor to discount the state observation is generated based on the process time. A state estimate is generated based on the discounted state observation. A system includes a process tool, a metrology tool, and a process controller. The process tool is operable to perform a process in accordance with an operating recipe. The metrology tool is operable to generate a state observation associated with the process. The process controller is operable to receive the state observation, the state observation having an associated process time, generate a weighting factor to discount the state observation based on the process time, generate a state estimate based on the discounted state observation, and determine at least one parameter of the operating recipe based on the state estimate.

Abstract: The present invention provides a method and apparatus for selecting wafers for sampling. The method includes determining a plurality of sampling rules associated with at least one of a plurality of wafers and selecting at least one wafer for sampling based on the plurality of sampling rules.

Abstract: A method includes defining a plurality of simple sampling rules for selecting material for metrology. Each simple sampling rule has an associated penalty. At least one combination sampling rule relating a subset of at least two simple sampling rules is defined. The combination sampling rule has an associated penalty. The penalties are assessed responsive to a previous material selection not satisfying the simple sampling rules or the combination sampling rule. Material is selected for subsequent metrology based on the sampling rules and the assessed penalties. At least one characteristic of the selected material is measured.

Abstract: A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identify and reject outlier data. The process is controlled based on the metrology data remaining after the rejection of the outlier data.

Abstract: A method includes providing a plurality of sampling rules. Each sampling rule is associated with at least one of a plurality of sites on a workpiece. At least one penalty is assigned to each sampling rule. The penalty is assessed responsive to a previous site selection not satisfying the associated sampling rule. A subset of the sites is selected for subsequent metrology based on the sampling rules and the assessed penalties. At least one characteristic of the workpiece is measured at the selected subset of the sites.

Abstract: A method includes processing a plurality of workpieces to form at least one feature on each workpiece. A plurality of characteristics of the feature is measured. A covariance matrix including diagonal and non-diagonal terms for the plurality of characteristics measured is constructed. At least the non-diagonal terms of the covariance matrix are monitored. A sampling plan for measuring the workpieces is determined based on the monitoring. A system includes a plurality of tools, at least one metrology tool, and a sampling controller. The tools are configured to process a plurality of workpieces to form at least one feature on each workpiece. The metrology tool is configured to measure a plurality of characteristics of the feature.

Abstract: A method includes defining a model of a process for manufacturing a device, the process including a plurality of steps. A plurality of inline process targets are defined for at least a subset of the process steps. The model relates the inline process targets to a plurality of process output parameters. A first set of probabilistic constraints for the inline process targets is defined. A second set of probabilistic constraints for the process output parameters is defined. An objective function is defined based on the model and the plurality of process output parameters. A trajectory of the process output parameters is determined by optimizing the objective function subject to the first and second sets of probabilistic constraints for each process step to determine values for the inline process targets at each process step, the optimization being iterated after completion of each process step for the remaining process steps.