Abstract: Semiconductor optoelectronic devices based on type-II band alignments comprising a compound valence-band quantum well structure, known as an H-layer, are disclosed. The use of the H-layer structure allows simultaneous optimization of optical properties of the semiconductor structures as well as lattice matching of the various layers of the device. The use of H-layer valence-band quantum wells enables improvements to several optical device applications including semiconductor lasers, optical modulators, photon detectors and the like.

Abstract: Quantum-cascade lasers are provided with an active section in which relaxation of carriers from a lower laser level is provided by three or more phonon-assisted transitions to levels within the active section whose energies are below the energy of the lower laser level. The gain region of the laser consists of alternating active and injector sections, with an injection barrier inserted between each injector section and the adjacent active section, and an exit barrier inserted between each active section and the adjacent injector section. The active section comprises a sufficient number of quantum wells separated by quantum barriers to produce the desired energy-level structure consisting of an upper laser level, a lower laser level, and at least three levels that have lower energies than the lower laser level, with the separation of adjacent energy levels below and including the lower laser level that are at least equal to the energy of the quantum well material's longitudinal optical phonon.

Abstract: Quantum-cascade lasers are provided with an active section in which relaxation of carriers from a lower laser level is provided by three or more phonon-assisted transitions to levels within the active section whose energies are below the energy of the lower laser level. The gain region of the laser consists of alternating active and injector sections, with an injection barrier inserted between each injector section and the adjacent active section, and an exit barrier inserted between each active section and the adjacent injector section. The active section comprises a sufficient number of quantum wells separated by quantum barriers to produce the desired energy-level structure consisting of an upper laser level, a lower laser level, and at least three levels that have lower energies than the lower laser level, with the separation of adjacent energy levels below and including the lower laser level that are at least equal to the energy of the quantum well material's longitudinal optical phonon.

Abstract: A quantum well semiconductor device that is responsive to optical energy and operates by resonant field ionization of quantum confined excitons and comprises a semiconductor device including a multi-layered semiconductor structure fabricated on the substrate and including at least two quantum well layers of mutually different widths separated from each other by a semiconductor barrier layer. Because of the different widths, the two quantum well layers have distinct and different electron and hole sub-band energies which when an external electric field is applied across the semiconductor structure, it is possible to bring the electron sub-bands of the wells into resonance, whereupon electrons tunnel back and forth through the barrier layer thereby altering the light absorption coefficient near the excitonic absorption feature. This mechanism provides a means to phase shift or modulate the light traversing through the device.

Abstract: An orotron for generating near millimeter wavelength radiation at a selectable output frequency within a wide frequency range, in which the orotron output power is automatically tuned electronically at the selected output frequency. A piezoelectric electromechanical positioning device is connected between the two mirrors forming the open resonator of the orotron to determine the mirror separation in accordance with a position control signal. The electron beam acceleration voltage, which determines the orotron output frequency, and the position control signal are adjusted simultaneously so as to tune the output power at a single oscillation mode of the orotron resonator over a wide frequency range. In the preferred embodiment, the actual output frequency is detected and compared with the selected output frequency, and the beam acceleration voltage and mirror separation simultaneously adjusted to continuously tune and maintain the orotron output at the selected frequency.

Abstract: Apparatus and methods for producing an intensity image from a transparent phase object. A laser beam is generated and expanded. A shutter disposed in the path of the expanded laser beam is opened, and the expanded laser beam is split into first and second beams. The first beam is directed through the transparent phase object and focused into a photorefractive hologram recording crystal for the write time of the crystal. The shutter is closed, and the position of the transparent phase object is shifted an incremental amount. The shutter is opened again so that the first beam is directed through the shifted transparent phase object and into the photorefractive hologram recording crystal such that a phase-conjugate beam is produced traveling in the opposite direction of the first beam. The phase-conjugate beam is collimated, directed through the shifted transparent phase object, and split into third and fourth beams.

Abstract: Method and apparatus for modulating coherent radiation generated by an orotron in accordance with a low voltage control signal applied to the diffraction grating to vary the grating-to-cathode voltage from the cathode-to-collector voltage over a selected voltage range determined by the maximum and minimum values of the control voltage. For amplitude modulation, the grating-to-cathode voltage is varied within a voltage range between a lower voltage at which the orotron output power starts to fall abruptly and a cutoff voltage at which coherent radiation ceases. For frequency modulation, the grating-to-cathode voltage is varied within a voltage range, including the point of maximum power output, where there is a minimum change of output power with a change in the grating-to-cathode voltage.

Abstract: A method and apparatus for increasing the power output and efficiency of an orotron generating near millimeter wavelength radiation. In accordance with a theory of orotron operation described herein and confirmed experimentally, the ribbon-like electron beam utilized in the orotron has a very high current density to effect a large increase in orotron output power and efficiency due to space-charge effects in the beam. In the preferred embodiment, the high density electron beam is generated by a closely-packed rectangular array of field-emission cathodes.

Abstract: A diffraction radiation generator in which a ribbon electron beam is directed over a diffraction grating within an open resonator at a selected velocity to generate coherent radiation. After passing through the open resonator, the ribbon beam is directed through aligned slits in two or more conductive elements to a collector. Progressively negative voltages relative to the grating voltage can be applied to the elements and the collector to decelerate the electrons forming the ribbon beam and thus minimize heating of the collector and increase the operating efficiency of the generator. Also, the elements and the collector can be utilized to analyze the ribbon beam.

Abstract: The device of the invention comprises a body of dielectric material having a metallic surface on one portion thereof. An electron beam is passed adjacent a second portion of the dielectric body in order to generate electromagnetic radiation in the dielectric. A feedback loop is provided to improve the coherence of the radiation output.

Abstract: A high frequency electromagnetic wave generator is disclosed which comprises an electron gun which directs an electron beam through a region generally adjacent a diffraction grating. The grating cooperates with an opposed reflecting surface to produce a standing electromagnetic wave. The reflector comprises a highly reflective dielectric coated mirror. Supporting means for the diffraction grating may also comprise a reflective dielectric surface.