Abstract: Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.

Abstract: Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.

Abstract: This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.

Abstract: Systems and methods for tuning a DBR stack for an optical amplifier. The DBR layers in a mirror of the optical amplifier have a duty cycle that can be altered to tune a location of a channel drop in a gain spectrum. In addition to changing the duty cycle, the DBR stacks can be segmented. The segmented DBR stacks and/or the selected duty cycle tunes a location of a channel drop outside of a range of wavelengths of interest.

Abstract: Systems and methods for extending a linear range of a semiconductor optical amplifier (SOA). A feedback layer is included in an SOA. The optical mode of the SOA is distributed between the feedback layer and the active region. As output optical power increases, the mode confinement of the active region increases and the mode is drawn from the feedback layer into the active region. The increase in the mode confinement offsets a loss of material gain such that the linear range of the SOA is extended. In one embodiment, the modal gain increases an higher output optical powers.

Abstract: An optical amplifier module that is insensitive to polarization comprises a first fiber, a second fiber, a semiconductor optical amplifier (SOA), and a polarization dependent loss (PDL) unit. The first fiber provides for optical input to the SOA. The SOA amplifies the optical signal received and outputs the amplified signal. The output of the SOA is optically coupled to the PDL unit. The PDL unit provides polarization dependent loss and the loss is preferably selected to match the polarization dependent gain of the SOA such that when two are coupled there is no overall polarization dependence. The output of the PDL is optically coupled to the fiber for transmission output.

Abstract: An optical amplifier module that is insensitive to polarization comprises a first fiber, a second fiber, a semiconductor optical amplifier (SOA), and a polarization dependent loss (PDL) unit. The first fiber provides for optical input to the SOA. The SOA amplifies the optical signal received and outputs the amplified signal. The output of the SOA is optically coupled to the PDL unit. The PDL unit provides polarization dependent loss and the loss is preferably selected to match the polarization dependent gain of the SOA such that when two are coupled there is no overall polarization dependence. The output of the PDL is optically coupled to the fiber for transmission output.

Abstract: An optical amplifier module that is insensitive to polarization comprises a first fiber, a second fiber, a semiconductor optical amplifier (SOA), and a polarization dependent loss (PDL) unit. The first fiber provides for optical input to the SOA. The SOA amplifies the optical signal received and outputs the amplified signal. The output of the SOA is optically coupled to the unit. The PDL unit provides polarization dependent loss and the loss is preferably selected to match the polarization dependent gain of the SOA such that when two are coupled there is no overall polarization dependence. The output of the PDL is optically coupled to the fiber for transmission output.