Patents by Inventor Richard P. Schneider, Jr.

Richard P. Schneider, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210066550
    Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
    Type: Application
    Filed: September 24, 2020
    Publication date: March 4, 2021
    Inventors: Fariba DANESH, Tsun LAU, Richard P. SCHNEIDER, JR., Michael JANSEN, Max BATRES
  • Publication number: 20200403121
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 24, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10804436
    Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: October 13, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Tsun Lau, Richard P. Schneider, Jr., Michael Jansen, Max Batres
  • Patent number: 10797202
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: October 6, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20200274029
    Abstract: A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.
    Type: Application
    Filed: April 10, 2019
    Publication date: August 27, 2020
    Inventors: Richard P. Schneider, JR., Benjamin Leung, Fariba Danesh, Zulal Tezcan Ozel, Miao-Chan Tsai
  • Publication number: 20200119229
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10566499
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: February 18, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20190341525
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: July 16, 2019
    Publication date: November 7, 2019
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10361341
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: July 23, 2019
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20190109262
    Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
    Type: Application
    Filed: October 5, 2018
    Publication date: April 11, 2019
    Inventors: Fariba DANESH, Tsun LAU, Richard P. SCHNEIDER, JR., Michael JANSEN
  • Publication number: 20180351017
    Abstract: A light emitting device, such as an LED, is formed by forming clusters of semiconductor nanostructures separated by inter-cluster regions that lack semiconductor nanostructures over a substrate, where each semiconductor nanostructure includes a nanostructure core having a doping of a first conductivity type and an active shell formed around the nanostructure core, and selectively depositing a second conductivity type semiconductor material layer having a doping of a second conductivity type on the clusters of semiconductor nanostructures. Portions of the selectively deposited second conductivity type semiconductor material layer form a continuous material layer in each cluster of semiconductor nanostructures, and the second conductivity type semiconductor material layer is not deposited in the inter-cluster regions.
    Type: Application
    Filed: June 1, 2017
    Publication date: December 6, 2018
    Inventors: Richard P. SCHNEIDER, JR., Benjamin LEUNG
  • Patent number: 9978808
    Abstract: A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: May 22, 2018
    Assignee: GLO AB
    Inventors: Richard P. Schneider, Jr., Benjamin Leung
  • Publication number: 20180114878
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: October 18, 2017
    Publication date: April 26, 2018
    Inventors: Fariba DANESH, Richard P. SCHNEIDER, JR., Fan REN, Michael JANSEN, Nathan GARDNER
  • Publication number: 20170323925
    Abstract: A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.
    Type: Application
    Filed: May 3, 2017
    Publication date: November 9, 2017
    Inventors: Richard P. SCHNEIDER, JR., Benjamin LEUNG
  • Patent number: 6630692
    Abstract: III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: October 7, 2003
    Assignee: Lumileds Lighting U.S., LLC
    Inventors: Werner Goetz, Nathan Fredrick Gardner, Richard Scott Kern, Andrew Youngkyu Kim, Anneli Munkholm, Stephen A. Stockman, Christopher P. Kocot, Richard P. Schneider, Jr.
  • Patent number: 6526082
    Abstract: A light-generating device such as a laser or LED. A light-generating device according to the present invention includes a first n-electrode layer in contact with a first n-contact layer, the first n-contact layer including an n-doped semiconductor. Light is generated by the recombination of holes and electrons in an n-p active layer. The n-p active layer includes a first p-doped layer in contact with a first n-doped layer, the first n-doped layer being connected electrically with the first n-contact layer. A p-n reverse-biased tunnel diode constructed from a second p-doped layer in contact with a second n-doped layer is connected electrically such that the second p-doped layer is connected electrically with the first p-layer. A second n-contact layer constructed from an n-doped semiconductor material is connected electrically to the second n-doped layer. A second n-electrode layer is placed in contact with the second n-contact layer.
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: February 25, 2003
    Assignee: Lumileds Lighting U.S., LLC
    Inventors: Scott W. Corzine, Richard P. Schneider, Jr., Ghulam Hasnain
  • Patent number: 6500257
    Abstract: An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.
    Type: Grant
    Filed: April 17, 1998
    Date of Patent: December 31, 2002
    Assignee: Agilent Technologies, Inc.
    Inventors: Shih-Yuan Wang, Changhua Chen, Yong Chen, Scott W. Corzine, R. Scott Kern, Richard P. Schneider, Jr.
  • Patent number: 5927995
    Abstract: A method for providing an epitaxial layer of a first material over a substrate comprising a second material having a lattice constant different from that of the first material. In the method of the present invention, a first layer of the first material is grown on the substrate. A portion of the first layer is treated to render that portion amorphous. The amorphous portion is then annealed at a temperature above the recrystallization point of the amorphous portion, but below the melting point of the crystallized portion of the first layer thereby recrystallizing the amorphous portion of the first layer. The first layer may rendered amorphous by ion implantation. The method may be used to generate GaN layers on sapphire having fewer dislocations than GaN layers generated by conventional deposition techniques.
    Type: Grant
    Filed: April 9, 1997
    Date of Patent: July 27, 1999
    Assignee: Hewlett-Packard Company
    Inventors: Yong Chen, Richard P. Schneider, Jr., Shih-Yun Wang
  • Patent number: 5896408
    Abstract: A VCSEL with a near planar top surface on which the top electrode is deposited. A VCSEL according to the present invention includes a top electrode, a top mirror having a top surface, a light generation region, and a bottom mirror for reflecting light toward the top mirror. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes are etched down from the top surface of the VCSEL to the layer containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region surrounded by an electrically insulating region, the conducting region being positioned under the top electrode.
    Type: Grant
    Filed: August 15, 1997
    Date of Patent: April 20, 1999
    Assignee: Hewlett-Packard Company
    Inventors: Scott W. Corzine, Richard P. Schneider, Jr., Michael R. T. Tan
  • Patent number: 5838715
    Abstract: A VCSEL 101 comprising an optical cavity having an optical loss and a loss-determining element 117 coupled to the optical cavity. The loss-determining element 117 progressively increases the optical loss of the optical cavity with increasing lateral distance from the optical axis 105. The optical cavity includes a first mirror region 111, a second mirror region 107, a plane light-generating region 125 sandwiched between the first mirror region 111 and the second mirror region 107, perpendicular to the optical axis 105, and an element 113 that defines the lateral extent of the optical cavity in the plane of the light-generating region 125. The first mirror region 111 and the second mirror region 107 are both conductive and have opposite conductivity modes.
    Type: Grant
    Filed: June 20, 1996
    Date of Patent: November 17, 1998
    Assignee: Hewlett-Packard Company
    Inventors: Scott W. Corzine, Dubravko I. Babic, Richard P. Schneider, Jr., Michael R. Tan, Shih-Yuan Wang