Abstract: A scatterometer is used to measure a property of structures on a substrate. A target grating comprises lines arranged periodically over an distance gp in a first direction, each line individually extending a distance gL in a second direction. The grating is illuminated with a spot of radiation and diffracted radiation is detected and used to calculate a measurement of CD, side wall angle and the like. The spot defines a field of view customized to the grating such that an extent fP of the spot in said first direction is greater than distance gp while an extent fL of the spot in said second direction is less than distance gL- The grating may be smaller than conventional gratings. The calculation can be simplified and made more robust, using a mathematical model that assumes that the grating is finite in the first direction but infinite in the second direction.

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets which are for measuring overlay using X-ray scattering and small targets which are for measuring overlay by diffraction of visible radiation. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract: The present invention determines property of a target (30) on a substrate (W), such as a grating on a wafer. An inspection apparatus has an illumination source (702, 710) with two or more illumination beams (716, 716?, 716?, 716??) in the pupil plane of a high numerical aperture objective lens (L3). The substrate and target are illuminated via the objective lens from different angles of incidence with respect to the plane of the substrate. In the case of four illumination beams, a quad wedge optical device (QW) is used to separately redirect diffraction orders of radiation scattered from the substrate and separates diffraction orders from the two or more illumination beams. For example four 0th diffraction orders are separated for four incident directions. After capture in multimode fibers (MF), spectrometers (S1-S4) are used to measure the intensity of the separately redirected 0th diffraction orders as a function of wavelength. This may then be used in determining a property of a target.

Abstract: A metrology apparatus uses radiation (304) in an EUV waveband. A first detection system (333) includes a spectroscopic grating (312) and a detector (313) for capturing a spectrum of the EUV radiation after interaction with a target (T). Properties of the target are measured by analyzing the spectrum. The radiation (304) further includes radiation in other wavebands such as VUV, DUV, UV, visible and IR. A second detection system (352, 372, 382) is arranged to receive at least a portion of radiation (350) reflected by the first spectroscopic grating and to capture a spectrum (SA) in one or more of said other wavebands. The second waveband spectrum can be used to enhance accuracy of the measurement based on the EUV spectrum, and/or it can be used for a different measurement. Other types of detection, such as polarization can be used instead or in addition to spectroscopic gratings.

Abstract: A product structure (407, 330?) is formed with defects (360-366). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure (604) to capture at least one diffraction pattern (606) formed by the radiation after scattering by the product structure. Reference data (612) describes a nominal product structure. At least one synthetic image (616) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects (660-666) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S(1)-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.

Abstract: Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).

Abstract: An illumination system for a lithographic or inspection apparatus. A plurality of optical waveguides transmit radiation from the illumination source to an output. A switching system enables selective control of one or more subsets of the optical waveguides. An inspection method uses an illumination system and inspection and lithographic apparatuses comprise an illumination system. In one example, the optical waveguides and switching system are replaced by a plurality of parallel optical bandpass filter elements. The optical bandpass filter elements each only transmit a predetermined wavelength or a band of wavelengths of radiation. At least two of the parallel optical bandpass filter elements each being operable to transmit a different wavelength or band of wavelengths.

Abstract: A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.

Abstract: A product structure (407, 330?) is formed with defects (360-366). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure (604) to capture at least one diffraction pattern (606) formed by the radiation after scattering by the product structure. Reference data (612) describes a nominal product structure. At least one synthetic image (616) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects (660-666) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S(1)-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.

Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.

Abstract: The present invention determines property of a target (30) on a substrate (W), such as a grating on a wafer. An inspection apparatus has an illumination source (702, 710) with two or more illumination beams (716, 716?, 716?, 716??) in the pupil plane of a high numerical aperture objective lens (L3). The substrate and target are illuminated via the objective lens from different angles of incidence with respect to the plane of the substrate. In the case of four illumination beams, a quad wedge optical device (QW) is used to separately redirect diffraction orders of radiation scattered from the substrate and separates diffraction orders from the two or more illumination beams. For example four 0th diffraction orders are separated for four incident directions. After capture in multimode fibers (MF), spectrometers (S1-S4) are used to measure the intensity of the separately redirected 0th diffraction orders as a function of wavelength. This may then be used in determining a property of a target.

Abstract: A scatterometer is used to measure a property of structures on a substrate. A target grating comprises lines arranged periodically over an distance gp in a first direction, each line individually extending a distance gL in a second direction. The grating is illuminated with a spot of radiation and diffracted radiation is detected and used to calculate a measurement of CD, side wall angle and the like. The spot defines a field of view customized to the grating such that an extent fP of the spot in said first direction is greater than distance gp while an extent fL of the spot in said second direction is less than distance gL- The grating may be smaller than conventional gratings. The calculation can be simplified and made more robust, using a mathematical model that assumes that the grating is finite in the first direction but infinite in the second direction.

Abstract: A lithographic manufacturing system produces periodic structures with feature sizes less than 10 nm and a direction of periodicity (D). A beam of radiation (1904) having a range of wavelengths in the EUV spectrum (1-100 nm or 1-150 nm) is focused into a spot (S) of around 5 ?m diameter. Reflected radiation (1908) is broken into a spectrum (1910) which is captured (1913) to obtain a target spectrum signal (ST). A reference spectrum is detected (1914) to obtain a reference spectrum signal (SR). Optionally a detector (1950) is provided to obtain a further spectrum signal (SF) using radiation diffracted at first order by the grating structure of the target. The angle of incidence (?) and azimuthal angle (?) are adjustable. The signals (ST, SR, SF) obtained at one or more angles are used to calculate measured properties of the target, for example CD and overlay.

Abstract: A pattern is applied to a substrate by a lithographic apparatus as part of a lithographic manufacturing system. Structures are produced with feature sizes less than 10 nm. A target includes one or more gratings with a direction of periodicity. A detector captures one or more diffraction spectra, to implement small angle X-ray scattering metrology. One or more properties, such as linewidth (CD), are calculated from the captured spectra for example by reconstruction. The irradiation direction defines a non-zero polar angle relative to a direction normal to the substrate and defines a non-zero azimuthal angle relative to the direction of periodicity, when projected onto a plane of the substrate. By selecting a suitable azimuthal angle, the diffraction efficiency of the target can be enhanced by a large factor. This allows measurement time to be reduced significantly compared with known techniques.

Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.

Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets which are for measuring overlay using X-ray scattering and small targets which are for measuring overlay by diffraction of visible radiation. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract: An illumination system for a lithographic or inspection apparatus. A plurality of optical waveguides transmit radiation from the illumination source to an output. A switching system enables selective control of one or more subsets of the optical waveguides. An inspection method uses an illumination system and inspection and lithographic apparatuses comprise an illumination system. In one example, the optical waveguides and switching system are replaced by a plurality of parallel optical bandpass filter elements. The optical bandpass filter elements each only transmit a predetermined wavelength or a band of wavelengths of radiation. At least two of the parallel optical bandpass filter elements each being operable to transmit a different wavelength or band of wavelengths.

Abstract: An illumination system for a lithographic or inspection apparatus. A plurality of optical waveguides transmit radiation from the illumination source to an output. A switching system enables selective control of one or more subsets of the optical waveguides. An inspection method uses an illumination system and inspection and lithographic apparatuses comprise an illumination system. In one example, the optical waveguides and switching system are replaced by a plurality of parallel optical bandpass filter elements. The optical bandpass filter elements each only transmit a predetermined wavelength or a band of wavelengths of radiation. At least two of the parallel optical bandpass filter elements each being operable to transmit a different wavelength or band of wavelengths.

Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.