Abstract: An exhaust system for use with a high temperature furnace used to perform oxidation and/or annealing operations of the type used in semiconductor fabrication. The exhaust system is designed to permit the furnace to be used with a controlled environment chamber surrounding the entry to the process chamber of the furnace. The exhaust system allows a relatively high velocity flow of exhaust gas from the process chamber through the exhaust system to occur when a positive pressure (e.g., annealing) operations are performed. Such high velocity flow prevents (a) backstreaming and (b) the accumulation of non-uniform concentrations of exhaust gases in the exhaust system, thereby permitting the accurate monitoring of the concentration of a selected gas in the exhaust system. Based on such monitoring, the opening of the door to the process chamber of the furnace may be prevented when the concentration of the selected gas exceeds a predetermined level.

Abstract: An exhaust system for use with a high temperature furnace used to perform oxidation and/or annealing operations of the type used in semiconductor fabrication. The exhaust system is designed to permit the furnace to be used with a controlled environment chamber surrounding the entry to the process chamber of the furnace. The exhaust system allows a relatively high velocity flow of exhaust gas from the process chamber through the exhaust system to occur when a positive pressure (e.g., annealing) operations are performed. Such high velocity flow prevents (a) backstreaming and (b) the accumulation of non-uniform concentrations of exhaust gases in the exhaust system, thereby permitting the accurate monitoring of the concentration of a selected gas in the exhaust system. Based on such monitoring, the opening of the door to the process chamber of the furnace may be prevented when the concentration of the selected gas exceeds a predetermined level.

Abstract: A contaminant trap for a high temperature, vertical furnace of the type used in semiconductor fabrication processing. The trap is designed to reduce particulate deposition within the process chamber, thereby decreasing the likelihood of by-product contamination of the wafers. The trap includes a housing having at least one sidewall, a bottom wall and a top wall which together define an inner compartment. The housing is attached to the exhaust port of the process chamber such that exhaust by-products in the process chamber may not be evacuated through the exhaust port around the housing. The housing has an input opening in the sidewall through which exhaust by-products pass from the process chamber into the inner compartment. An output opening extends through the sidewall near the top wall through which exhaust by-products are subsequently removed from the interior compartment of the housing.